Image de couverture de livre

Time-resolved measurement of ambipolar edge magnetoplasmon transport in InAs/InGaSb composite quantum wells

Fuente: arXiv

Enregistré dans:

Détails bibliographiques
Auteurs principaux:	Kamata, Hiroshi, Irie, Hiroshi, Kumada, Norio, Muraki, Koji
Format:	Preprint
Publié:	2022
Sujets:	Mesoscale and Nanoscale Physics
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

Documents similaires

Andreev Reflection in the Quantum Hall Regime at an Al/InAs Junction on a Cleaved Edge
par: Akiho, Takafumi, et autres
Publié: (2024)

Effects of GaAs buffer layer on quantum anomalous Hall insulator Vy(BixSb1-x)2-yTe3
par: Nakazawa, Yusuke, et autres
Publié: (2024)

Effects of GaAs Buffer Layer on Structural, Magnetic, and Transport Properties of Magnetic Topological Insulators Cr$_y$(Bi$_x$Sb$_{1-x}$)$_{2-y}$Te$_3$ and V$_y$(Bi$_x$Sb$_{1-x}$)$_{2-y}$Te$_3$ Films
par: Nakazawa, Yusuke, et autres
Publié: (2025)

Fast time-domain current measurement for quantum dot charge sensing using a homemade cryogenic transimpedance amplifier
par: Bohuslavskyi, Heorhii, et autres
Publié: (2022)

Telecom wavelength single-photon emission from quasi-resonantly excited InGaSb/AlGaSb quantum dots
par: Hakkarainen, Teemu, et autres
Publié: (2024)

Quantum transport in an ambipolar InSb nanowire quantum dot device
par: Deng, Mingtang, et autres
Publié: (2024)

Magnetocapacitance oscillations dominated by giant Rashba spin orbit interaction in InAs/GaSb quantum wells separated by AlSb barrier
par: Ribeiro, A. S. L., et autres
Publié: (2024)

Coherent-Incoherent Crossover of Charge and Neutral Mode Transport as Evidence for the Disorder-Dominated Fractional Edge Phase
par: Hashisaka, Masayuki, et autres
Publié: (2022)

Gate tunable edge magnetoplasmon resonators
par: Frigerio, E., et autres
Publié: (2024)

Drift velocity of edge magnetoplasmons due to magnetic edge channels
par: Sokolik, Alexey A., et autres
Publié: (2023)

Impact of in-situ controlled disorder screening on fractional quantum Hall effects and composite-fermion transport
par: Akiho, T., et autres
Publié: (2022)

Compact self-matched gyrators using edge magnetoplasmons
par: Tarascio, Aldo, et autres
Publié: (2026)

Multisubband Plasmons in InAs/GaSb Broken Gap Quantum Well
par: Pasek, Wojciech Julian, et autres
Publié: (2025)

Aharonov-Borm oscillation and Microwave-induced edge-magnetoplasmon modes enhanced by quantum point contact
par: Wang, Xinghao, et autres
Publié: (2024)

In-plane gate induced transition asymmetry of spin-resolved Landau levels in InAs-based quantum wells
par: Chiatti, Olivio, et autres
Publié: (2022)

High transparency induced superconductivity in field effect two-dimensional electron gases in undoped InAs/AlGaSb surface quantum wells
par: Bergeron, E. Annelise, et autres
Publié: (2024)

Magneto-Induced Topological Phase Transition in Inverted InAs/GaSb Bilayers
par: Han, Zhongdong, et autres
Publié: (2024)

Symmetry Breaking and Transition to Robust Excitonic Topological Order in InAs/GaSb Bilayers
par: Wang, Xinghao, et autres
Publié: (2026)

Shubnikov-de Haas quantum oscillations with large spin splitting in highmobility Al0.8Ga0.2Sb/InAs/ Al0.8Ga0.2Sb quantum-well heterostructures
par: Zhi, Zhenghang, et autres
Publié: (2025)

Flat-Band Generation in InAs/GaSb Quantum Wells through Vertically Engineered Heterostructures
par: Enderson, Zachery A., et autres
Publié: (2026)

Coexistence of Topological and Normal Insulating Phases in Electro-Optically Tuned InAs/GaSb Bilayer Quantum Wells
par: Meyer, Manuel, et autres
Publié: (2024)

Spin transport analysis for a spin pseudovalve-type L_l/SC/L_r trilayer for L = {FeCr, Fe, Co, NiFe, Ni} and SC = {GaSb, InSb, InAs, GaAs, ZnSe}
par: Zúñiga, Julián A., et autres
Publié: (2026)

Super-diffusive sub-picosecond extraction of hot carriers in black phosphorous
par: Yoshioka, Katsumasa, et autres
Publié: (2025)

Resonant plasmon-assisted tunneling in a double quantum dot coupled to a quantum-Hall plasmon resonator
par: Lin, Chaojing, et autres
Publié: (2024)

Gate-tunable giant superconducting nonreciprocal transport in few-layer $T_{\rm d}$-MoTe$_2$
par: Wakamura, T., et autres
Publié: (2023)

Effect of Spin-Orbit Coupling on Anomalous Quantum Oscillations in InAs/GaSb Quantum Wells
par: Du, Xinlong, et autres
Publié: (2025)

Dispersive detection of a charge qubit with a broadband high-impedance quantum-Hall plasmon resonator
par: Lin, Chaojing, et autres
Publié: (2026)

An ambipolar single-charge pump in silicon
par: Yamahata, Gento, et autres
Publié: (2024)

Intrinsic ultrafast edge photocurrent dynamics in WTe$_2$ driven by broken crystal symmetry
par: Chatterjee, Subhashri, et autres
Publié: (2025)

Coulomb oscillations of a quantum antidot formed by an airbridged pillar gate in the integer and fractional quantum Hall regime
par: Hata, Tokuro, et autres
Publié: (2024)

Spin-resolved spectroscopy using a quantum dot defined in InAs 2DEG
par: Danilenko, Alisa, et autres
Publié: (2022)

Systematic study of superconductivity in few-layer $T_d$-MoTe$_2$
par: Wakamura, Taro, et autres
Publié: (2026)

GaAs Microcavity Exciton-Polaritons in a Trap
par: Kim, Na Young, et autres
Publié: (2008)

Static quantum dot on a potential hilltop for generating and analyzing hot electrons in the quantum Hall regime
par: Oishi, Ryo, et autres
Publié: (2024)

Hole spin coherence in InAs/InAlGaAs self-assembled quantum dots emitting at telecom wavelengths
par: Evers, E., et autres
Publié: (2023)

Telecommunication wavelength confined Tamm plasmon structures containing InAs/GaAs quantum dot emitters at room temperature
par: Parker, Matthew, et autres
Publié: (2019)

Polarized Raman Analysis at Low Temperature to Examine Interface Phonons in InAs/GaAs_(1-x)Sb_x Quantum Dot Heterostructures
par: Kumar, Priyesh, et autres
Publié: (2024)

Absolute measurement of the exchange interaction in an InSb quantum well using Landau-level tunnelling spectroscopy
par: Clowes, S. K., et autres
Publié: (2025)

Mobility exceeding 100,000 cm$^2$/Vs in modulation-doped shallow InAs quantum wells coupled to epitaxial aluminum
par: Zhang, Teng, et autres
Publié: (2023)

Ordered InAs quantum dots on pre-patterned GaAs (0 0 1) by local oxidation nanolithography
par: Martín-Sánchez, J., et autres
Publié: (2025)