Predicting polaron mobility in organic semiconductors with the Feynman variational approach

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Hauptverfasser: Martin, Bradley A. A., Frost, Jarvist Moore
Format: Preprint
Veröffentlicht: 2022
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author Martin, Bradley A. A.
Frost, Jarvist Moore
author_facet Martin, Bradley A. A.
Frost, Jarvist Moore
contents We extend the Feynman variational method applied to the parabolic-band Fröhlich (continuum) large polaron~\cite{Feynman1955} to a Holstein (lattice) small polaron, with a parabolic-band. This new theory shows a discrete localisation as a function of coupling strength. Having build the theory with the same quasi-particle Lagrangian as the 1955 work, we can directly use the FHIP~\cite{Feynman1962} response theory to calculate DC mobility and complex conductivity. We show that we can take matrix elements from electronic structure calculations on real materials, by modelling charge-carrier mobility in crystalline Rubrene. Good agreement is found to measurement, with a predicted mobility of $μ= 47.72$~\si{cm^2 V^{-1} s^{-1}} at $300$~\si{K}.
format Preprint
id arxiv_https___arxiv_org_abs_2207_06846
institution arXiv
publishDate 2022
record_format arxiv
spellingShingle Predicting polaron mobility in organic semiconductors with the Feynman variational approach
Martin, Bradley A. A.
Frost, Jarvist Moore
Materials Science
We extend the Feynman variational method applied to the parabolic-band Fröhlich (continuum) large polaron~\cite{Feynman1955} to a Holstein (lattice) small polaron, with a parabolic-band. This new theory shows a discrete localisation as a function of coupling strength. Having build the theory with the same quasi-particle Lagrangian as the 1955 work, we can directly use the FHIP~\cite{Feynman1962} response theory to calculate DC mobility and complex conductivity. We show that we can take matrix elements from electronic structure calculations on real materials, by modelling charge-carrier mobility in crystalline Rubrene. Good agreement is found to measurement, with a predicted mobility of $μ= 47.72$~\si{cm^2 V^{-1} s^{-1}} at $300$~\si{K}.
title Predicting polaron mobility in organic semiconductors with the Feynman variational approach
topic Materials Science
url https://arxiv.org/abs/2207.06846