Andreev-like Reflection in the Pfaffian Fractional Quantum Hall Effect
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arXiv
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| Auteurs principaux: | , , , , |
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| Format: | Preprint |
| Publié: |
2022
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| _version_ | 1866911870791712768 |
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| author | Ohashi, Ryoi Nakai, Ryota Yokoyama, Takehito Tanaka, Yukio Nomura, Kentaro |
| author_facet | Ohashi, Ryoi Nakai, Ryota Yokoyama, Takehito Tanaka, Yukio Nomura, Kentaro |
| contents | We studied the tunnel transport between the edge of a Pfaffian fractional quantum Hall state and that of an integer quantum Hall state. Based on the duality argument between the strong and weak tunnelings, we found that an Andreev-like reflection appeared in the strong tunneling regime. We calculated the charge conductance in the weak and strong tunneling regimes for the low-voltage limit. In the weak tunneling limit, $dI}/dV$ was proportional to $V^{1/ν}$ with bias voltage $V$ and $ν=1/2$. By contrast, in the strong tunneling limit, $dI/dV$ was expressed by $(e^{2}/h)2ν/(1+ν)$ with a correction term. We expect that this condition can be realized experimentally at the point contact between a fractional quantum Hall state with $ν=5/2$ and an integer quantum Hall state with $ν=3$. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2208_03336 |
| institution | arXiv |
| publishDate | 2022 |
| record_format | arxiv |
| spellingShingle | Andreev-like Reflection in the Pfaffian Fractional Quantum Hall Effect Ohashi, Ryoi Nakai, Ryota Yokoyama, Takehito Tanaka, Yukio Nomura, Kentaro Mesoscale and Nanoscale Physics We studied the tunnel transport between the edge of a Pfaffian fractional quantum Hall state and that of an integer quantum Hall state. Based on the duality argument between the strong and weak tunnelings, we found that an Andreev-like reflection appeared in the strong tunneling regime. We calculated the charge conductance in the weak and strong tunneling regimes for the low-voltage limit. In the weak tunneling limit, $dI}/dV$ was proportional to $V^{1/ν}$ with bias voltage $V$ and $ν=1/2$. By contrast, in the strong tunneling limit, $dI/dV$ was expressed by $(e^{2}/h)2ν/(1+ν)$ with a correction term. We expect that this condition can be realized experimentally at the point contact between a fractional quantum Hall state with $ν=5/2$ and an integer quantum Hall state with $ν=3$. |
| title | Andreev-like Reflection in the Pfaffian Fractional Quantum Hall Effect |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2208.03336 |