Wide Effective Work-Function Tuning of Al/SiO$_2$/Si Junction Achieved with Graphene Interlayer at Al/SiO$_2$ Interface
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arXiv
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| Format: | Preprint |
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2022
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| _version_ | 1866912585019817984 |
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| author | Song, Wonho Lee, Jung-Yong Kim, Junhyung Park, Jinyoung Jo, Jaehyeong Hyun, Eunseok Kim, Jiwan Eom, Daejin Choi, Gahyun Park, Kibog |
| author_facet | Song, Wonho Lee, Jung-Yong Kim, Junhyung Park, Jinyoung Jo, Jaehyeong Hyun, Eunseok Kim, Jiwan Eom, Daejin Choi, Gahyun Park, Kibog |
| contents | The effective work-function of metal electrode is one of the major factors to determine the threshold voltage of metal/oxide/semiconductor junction. In this work, we demonstrate experimentally that the effective work-function of Aluminum (Al) electrode in Al/SiO$_2$/n-Si junction increases significantly by $\sim$1.04 eV with the graphene interlayer inserted at Al/SiO$_2$ interface. We also provide the device-physical analysis of solving Poisson equation when the flat-band voltage is applied to the junction, supporting that the wide tuning of Al effective work-function originates from the electrical dipole layer formed by the overlap of electron orbitals between Al and graphene layer. Our work suggests the feasibility of constructing the dual-metal gate CMOS circuitry just by using Al electrodes with area-specific underlying graphene interlayer. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2208_08044 |
| institution | arXiv |
| publishDate | 2022 |
| record_format | arxiv |
| spellingShingle | Wide Effective Work-Function Tuning of Al/SiO$_2$/Si Junction Achieved with Graphene Interlayer at Al/SiO$_2$ Interface Song, Wonho Lee, Jung-Yong Kim, Junhyung Park, Jinyoung Jo, Jaehyeong Hyun, Eunseok Kim, Jiwan Eom, Daejin Choi, Gahyun Park, Kibog Mesoscale and Nanoscale Physics The effective work-function of metal electrode is one of the major factors to determine the threshold voltage of metal/oxide/semiconductor junction. In this work, we demonstrate experimentally that the effective work-function of Aluminum (Al) electrode in Al/SiO$_2$/n-Si junction increases significantly by $\sim$1.04 eV with the graphene interlayer inserted at Al/SiO$_2$ interface. We also provide the device-physical analysis of solving Poisson equation when the flat-band voltage is applied to the junction, supporting that the wide tuning of Al effective work-function originates from the electrical dipole layer formed by the overlap of electron orbitals between Al and graphene layer. Our work suggests the feasibility of constructing the dual-metal gate CMOS circuitry just by using Al electrodes with area-specific underlying graphene interlayer. |
| title | Wide Effective Work-Function Tuning of Al/SiO$_2$/Si Junction Achieved with Graphene Interlayer at Al/SiO$_2$ Interface |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2208.08044 |