Clamping effect on temperature-induced valence transition in epitaxial EuPd$_2$Si$_2$ thin films grown on MgO(001)
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arXiv
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| Natura: | Preprint |
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2022
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| author | Kölsch, Sebastian Schuck, Alfons Fedchenko, Olena Vasilyev, Dmitry Chernov, Sergeij Tkach, Lena Schlüter, Christoph Peixoto, Thiago R. F. Gloskowski, Andrii Elmers, Hans-Joachim Schönhense, Gerd Krellner, Cornelius Huth, Michael |
| author_facet | Kölsch, Sebastian Schuck, Alfons Fedchenko, Olena Vasilyev, Dmitry Chernov, Sergeij Tkach, Lena Schlüter, Christoph Peixoto, Thiago R. F. Gloskowski, Andrii Elmers, Hans-Joachim Schönhense, Gerd Krellner, Cornelius Huth, Michael |
| contents | Bulk EuPd$_2$Si$_2$ show a temperature-driven valence transisition of europium from $\sim$+2 above 200 K to $\sim$+3 below 100 K, which is correlated with a shrinking by approximatly 2 % of the crystal lattice along the two a-axes. Due to this interconnection between lattice and electronic degrees of freedom the influence of strain in epitaxial thin films is particularly interesting. Ambient X-ray diffraction (XRD) confirms an epitaxial relationship of tetragonal EuPd$_2$Si$_2$ on MgO(001) with an out-of plane c-axis orientation for the thin film, whereby the a-axes of both lattices align. XRD at low temperatures reveals a strong coupling of the thin film lattice to the substrate, showing no abrupt compression over the temperature range from 300 to 10 K. Hard X-ray photoelectron spectroscopy at 300 and 20 K reveals a temperature-independent valence of +2.0 for Eu. The evolving biaxial tensile strain upon cooling is suggested to suppress the valence transition. Instead low temperature transport measurements of the resistivity and the Hall effect in a magnetic field up to 5 T point to a film thickness independent phase transition at 16-20 K, indicating magnetic ordering. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2208_14912 |
| institution | arXiv |
| publishDate | 2022 |
| record_format | arxiv |
| spellingShingle | Clamping effect on temperature-induced valence transition in epitaxial EuPd$_2$Si$_2$ thin films grown on MgO(001) Kölsch, Sebastian Schuck, Alfons Fedchenko, Olena Vasilyev, Dmitry Chernov, Sergeij Tkach, Lena Schlüter, Christoph Peixoto, Thiago R. F. Gloskowski, Andrii Elmers, Hans-Joachim Schönhense, Gerd Krellner, Cornelius Huth, Michael Materials Science Strongly Correlated Electrons Bulk EuPd$_2$Si$_2$ show a temperature-driven valence transisition of europium from $\sim$+2 above 200 K to $\sim$+3 below 100 K, which is correlated with a shrinking by approximatly 2 % of the crystal lattice along the two a-axes. Due to this interconnection between lattice and electronic degrees of freedom the influence of strain in epitaxial thin films is particularly interesting. Ambient X-ray diffraction (XRD) confirms an epitaxial relationship of tetragonal EuPd$_2$Si$_2$ on MgO(001) with an out-of plane c-axis orientation for the thin film, whereby the a-axes of both lattices align. XRD at low temperatures reveals a strong coupling of the thin film lattice to the substrate, showing no abrupt compression over the temperature range from 300 to 10 K. Hard X-ray photoelectron spectroscopy at 300 and 20 K reveals a temperature-independent valence of +2.0 for Eu. The evolving biaxial tensile strain upon cooling is suggested to suppress the valence transition. Instead low temperature transport measurements of the resistivity and the Hall effect in a magnetic field up to 5 T point to a film thickness independent phase transition at 16-20 K, indicating magnetic ordering. |
| title | Clamping effect on temperature-induced valence transition in epitaxial EuPd$_2$Si$_2$ thin films grown on MgO(001) |
| topic | Materials Science Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2208.14912 |