Experimental Investigation of Drain Noise in High Electron Mobility Transistors: Thermal and Hot Electron Noise
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| Autores principales: | , , , |
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| Formato: | Preprint |
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2022
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| _version_ | 1866916625022713856 |
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| author | Gabritchidze, Bekari Cleary, Kieran A. Readhead, Anthony C. Minnich, Austin J. |
| author_facet | Gabritchidze, Bekari Cleary, Kieran A. Readhead, Anthony C. Minnich, Austin J. |
| contents | We report the on-wafer characterization of $S$-parameters and microwave noise temperature ($T_{50}$) of discrete metamorphic InGaAs high electron mobility transistors (mHEMTs) at 40 K and 300 K and over a range of drain-source voltages ($V_{DS}$). From these data, we extract a small-signal model and the drain (output) noise current power spectral density ($S_{id}$) at each bias and temperature. This procedure enables $S_{id}$ to be obtained while accounting for the variation of small-signal model, noise impedance match, and other parameters under the various conditions. We find that the thermal noise associated with the channel conductance can only account for a portion of the measured output noise. Considering the variation of output noise with physical temperature and bias and prior studies of microwave noise in quantum wells, we hypothesize that a hot electron noise source based on real-space transfer of electrons from the channel to the barrier could account for the remaining portion of $S_{id}$. We suggest further studies to gain insights into the physical mechanisms. Finally, we calculate that the minimum HEMT noise temperature could be reduced by up to $\sim 50$% and $\sim 30$% at cryogenic temperature and room temperature, respectively, if the hot electron noise could be suppressed. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2209_02858 |
| institution | arXiv |
| publishDate | 2022 |
| record_format | arxiv |
| spellingShingle | Experimental Investigation of Drain Noise in High Electron Mobility Transistors: Thermal and Hot Electron Noise Gabritchidze, Bekari Cleary, Kieran A. Readhead, Anthony C. Minnich, Austin J. Mesoscale and Nanoscale Physics Applied Physics We report the on-wafer characterization of $S$-parameters and microwave noise temperature ($T_{50}$) of discrete metamorphic InGaAs high electron mobility transistors (mHEMTs) at 40 K and 300 K and over a range of drain-source voltages ($V_{DS}$). From these data, we extract a small-signal model and the drain (output) noise current power spectral density ($S_{id}$) at each bias and temperature. This procedure enables $S_{id}$ to be obtained while accounting for the variation of small-signal model, noise impedance match, and other parameters under the various conditions. We find that the thermal noise associated with the channel conductance can only account for a portion of the measured output noise. Considering the variation of output noise with physical temperature and bias and prior studies of microwave noise in quantum wells, we hypothesize that a hot electron noise source based on real-space transfer of electrons from the channel to the barrier could account for the remaining portion of $S_{id}$. We suggest further studies to gain insights into the physical mechanisms. Finally, we calculate that the minimum HEMT noise temperature could be reduced by up to $\sim 50$% and $\sim 30$% at cryogenic temperature and room temperature, respectively, if the hot electron noise could be suppressed. |
| title | Experimental Investigation of Drain Noise in High Electron Mobility Transistors: Thermal and Hot Electron Noise |
| topic | Mesoscale and Nanoscale Physics Applied Physics |
| url | https://arxiv.org/abs/2209.02858 |