Mapping the Diffusion Tensor in Microstructured Perovskites
Fuente:
arXiv
Gespeichert in:
| Hauptverfasser: | , , , , , |
|---|---|
| Format: | Preprint |
| Veröffentlicht: |
2022
|
| Schlagworte: | |
| Online-Zugang: | |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| _version_ | 1866909365889400832 |
|---|---|
| author | Brenes, Roberto deQuilettes, Dane W. Swartwout, Richard Alsalloum, Abdullah Y. Bakr, Osman M. Bulović, Vladimir |
| author_facet | Brenes, Roberto deQuilettes, Dane W. Swartwout, Richard Alsalloum, Abdullah Y. Bakr, Osman M. Bulović, Vladimir |
| contents | Understanding energy transport in semiconductors is critical for design of electronic and optoelectronic devices. Semiconductor material properties such as charge carrier mobility or diffusion length are commonly measured in bulk crystals and determined using models that describe transport behavior in homogeneous media, where structural boundary effects are minimal. However, most emerging semiconductors exhibit nano and microscale heterogeneity. Therefore, experimental techniques with high spatial resolution paired with models that capture anisotropy and domain boundary behavior are needed. We develop a diffusion tensor-based framework to analyze experimental photoluminescence (PL) diffusion maps accounting for material nano and microstructure. Specifically, we quantify both carrier transport and recombination in single crystal and polycrystalline lead halide perovskites by globally fitting diffusion maps, with spatial, temporal, and PL intensity data. We reveal a 29% difference in principal diffusion coefficients and alignment between electronically coupled grains for CH3NH3PbI3 polycrystalline films. This framework allows for understanding and optimizing anisotropic energy transport in heterogeneous materials. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2209_08684 |
| institution | arXiv |
| publishDate | 2022 |
| record_format | arxiv |
| spellingShingle | Mapping the Diffusion Tensor in Microstructured Perovskites Brenes, Roberto deQuilettes, Dane W. Swartwout, Richard Alsalloum, Abdullah Y. Bakr, Osman M. Bulović, Vladimir Materials Science Applied Physics Understanding energy transport in semiconductors is critical for design of electronic and optoelectronic devices. Semiconductor material properties such as charge carrier mobility or diffusion length are commonly measured in bulk crystals and determined using models that describe transport behavior in homogeneous media, where structural boundary effects are minimal. However, most emerging semiconductors exhibit nano and microscale heterogeneity. Therefore, experimental techniques with high spatial resolution paired with models that capture anisotropy and domain boundary behavior are needed. We develop a diffusion tensor-based framework to analyze experimental photoluminescence (PL) diffusion maps accounting for material nano and microstructure. Specifically, we quantify both carrier transport and recombination in single crystal and polycrystalline lead halide perovskites by globally fitting diffusion maps, with spatial, temporal, and PL intensity data. We reveal a 29% difference in principal diffusion coefficients and alignment between electronically coupled grains for CH3NH3PbI3 polycrystalline films. This framework allows for understanding and optimizing anisotropic energy transport in heterogeneous materials. |
| title | Mapping the Diffusion Tensor in Microstructured Perovskites |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2209.08684 |