Universal behavior of highly-confined heat flow in semiconductor nanosystems: from nanomeshes to metalattices

Fuente: arXiv
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Main Authors: McBennett, Brendan, Beardo, Albert, Nelson, Emma E., Abad, Begoña, Frazer, Travis D., Adak, Amitava, Esashi, Yuka, Li, Baowen, Kapteyn, Henry C., Murnane, Margaret M., Knobloch, Joshua L.
Format: Preprint
Published: 2022
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author McBennett, Brendan
Beardo, Albert
Nelson, Emma E.
Abad, Begoña
Frazer, Travis D.
Adak, Amitava
Esashi, Yuka
Li, Baowen
Kapteyn, Henry C.
Murnane, Margaret M.
Knobloch, Joshua L.
author_facet McBennett, Brendan
Beardo, Albert
Nelson, Emma E.
Abad, Begoña
Frazer, Travis D.
Adak, Amitava
Esashi, Yuka
Li, Baowen
Kapteyn, Henry C.
Murnane, Margaret M.
Knobloch, Joshua L.
contents Nanostructuring on length scales corresponding to phonon mean free paths provides control over heat flow in semiconductors and makes it possible to engineer their thermal properties. However, the influence of boundaries limits the validity of bulk models, while first principles calculations are too computationally expensive to model real devices. Here we use extreme ultraviolet beams to study phonon transport dynamics in a 3D nanostructured silicon metalattice with deep nanoscale feature size, and observe dramatically reduced thermal conductivity relative to bulk. To explain this behavior, we develop a predictive theory wherein thermal conduction separates into a geometric permeability component and an intrinsic viscous contribution, arising from a new and universal effect of nanoscale confinement on phonon flow. Using experiments and atomistic simulations, we show that our theory applies to a general set of highly-confined silicon nanosystems, from metalattices, nanomeshes, porous nanowires to nanowire networks, of great interest for next-generation energy-efficient devices.
format Preprint
id arxiv_https___arxiv_org_abs_2209_11743
institution arXiv
publishDate 2022
record_format arxiv
spellingShingle Universal behavior of highly-confined heat flow in semiconductor nanosystems: from nanomeshes to metalattices
McBennett, Brendan
Beardo, Albert
Nelson, Emma E.
Abad, Begoña
Frazer, Travis D.
Adak, Amitava
Esashi, Yuka
Li, Baowen
Kapteyn, Henry C.
Murnane, Margaret M.
Knobloch, Joshua L.
Mesoscale and Nanoscale Physics
Nanostructuring on length scales corresponding to phonon mean free paths provides control over heat flow in semiconductors and makes it possible to engineer their thermal properties. However, the influence of boundaries limits the validity of bulk models, while first principles calculations are too computationally expensive to model real devices. Here we use extreme ultraviolet beams to study phonon transport dynamics in a 3D nanostructured silicon metalattice with deep nanoscale feature size, and observe dramatically reduced thermal conductivity relative to bulk. To explain this behavior, we develop a predictive theory wherein thermal conduction separates into a geometric permeability component and an intrinsic viscous contribution, arising from a new and universal effect of nanoscale confinement on phonon flow. Using experiments and atomistic simulations, we show that our theory applies to a general set of highly-confined silicon nanosystems, from metalattices, nanomeshes, porous nanowires to nanowire networks, of great interest for next-generation energy-efficient devices.
title Universal behavior of highly-confined heat flow in semiconductor nanosystems: from nanomeshes to metalattices
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2209.11743