Origin of the injection-dependent emission blueshift and linewidth broadening of III-nitride light-emitting diodes

Fuente: arXiv
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Auteurs principaux: Pant, Nick, Li, Xuefeng, DeJong, Elizabeth, Feezell, Daniel, Armitage, Rob, Kioupakis, Emmanouil
Format: Preprint
Publié: 2022
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author Pant, Nick
Li, Xuefeng
DeJong, Elizabeth
Feezell, Daniel
Armitage, Rob
Kioupakis, Emmanouil
author_facet Pant, Nick
Li, Xuefeng
DeJong, Elizabeth
Feezell, Daniel
Armitage, Rob
Kioupakis, Emmanouil
contents III-nitride light-emitting diodes (LEDs) exhibit an injection-dependent emission blueshift and linewidth broadening that is severely detrimental to their color purity. Using first-principles multi-scale modelling that accurately captures the competition between polarization-charge screening, phase-space filling, and many-body plasma renormalization, we explain the current-dependent spectral characteristics of polar III-nitride LEDs fabricated with state-of-the-art quantum wells. Our analysis uncovers a fundamental connection between carrier dynamics and the injection-dependent spectral characteristics of light-emitting materials. For example, polar III-nitride LEDs offer poor control over their injection-dependent color purity due to their poor hole transport and slow carrier recombination dynamics, which forces them to operate at or near degenerate carrier densities. Designs that accelerate carrier recombination and transport and reduce the carrier density required to operate LEDs at a given current density lessen their injection-dependent wavelength shift and linewidth broadening.
format Preprint
id arxiv_https___arxiv_org_abs_2209_12757
institution arXiv
publishDate 2022
record_format arxiv
spellingShingle Origin of the injection-dependent emission blueshift and linewidth broadening of III-nitride light-emitting diodes
Pant, Nick
Li, Xuefeng
DeJong, Elizabeth
Feezell, Daniel
Armitage, Rob
Kioupakis, Emmanouil
Applied Physics
Materials Science
Optics
III-nitride light-emitting diodes (LEDs) exhibit an injection-dependent emission blueshift and linewidth broadening that is severely detrimental to their color purity. Using first-principles multi-scale modelling that accurately captures the competition between polarization-charge screening, phase-space filling, and many-body plasma renormalization, we explain the current-dependent spectral characteristics of polar III-nitride LEDs fabricated with state-of-the-art quantum wells. Our analysis uncovers a fundamental connection between carrier dynamics and the injection-dependent spectral characteristics of light-emitting materials. For example, polar III-nitride LEDs offer poor control over their injection-dependent color purity due to their poor hole transport and slow carrier recombination dynamics, which forces them to operate at or near degenerate carrier densities. Designs that accelerate carrier recombination and transport and reduce the carrier density required to operate LEDs at a given current density lessen their injection-dependent wavelength shift and linewidth broadening.
title Origin of the injection-dependent emission blueshift and linewidth broadening of III-nitride light-emitting diodes
topic Applied Physics
Materials Science
Optics
url https://arxiv.org/abs/2209.12757