Electrical manipulation of valley-qubit and valley geometric phase in lateral monolayer heterostructures
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arXiv
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| Autori principali: | , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2022
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| _version_ | 1866917751538319360 |
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| author | Pawłowski, Jarosław Tiessen, John Eric Dax, Rockwell Shi, Junxia |
| author_facet | Pawłowski, Jarosław Tiessen, John Eric Dax, Rockwell Shi, Junxia |
| contents | We explore a solid state qubit defined on valley isospin of an electron confined in a gate-defined quantum dot created in an area of monolayer MoS$_2$/WS$_2$ lateral junction, where a steep dipolar potential emerges. We show that the junction oriented along an armchair direction can induce intervalley transitions of the electron confined in the neighboring quantum dot when the (gate-controllable) overlapping with the junction is significant and pumping frequency tuned. The pumping scheme that induces transitions is all-electrical: obtained by applying oscillating voltages to control gates and thus enables for scalable qubit architectures. We also report another possibility of valley-qubit manipulation by accumulating non-Abelian valley Berry phase. To model nanodevice we solve the time-dependent Schrödinger-Poisson equations in a tight-binding approach and obtain exact time-evolution of the valley-qubit system. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2209_14445 |
| institution | arXiv |
| publishDate | 2022 |
| record_format | arxiv |
| spellingShingle | Electrical manipulation of valley-qubit and valley geometric phase in lateral monolayer heterostructures Pawłowski, Jarosław Tiessen, John Eric Dax, Rockwell Shi, Junxia Mesoscale and Nanoscale Physics We explore a solid state qubit defined on valley isospin of an electron confined in a gate-defined quantum dot created in an area of monolayer MoS$_2$/WS$_2$ lateral junction, where a steep dipolar potential emerges. We show that the junction oriented along an armchair direction can induce intervalley transitions of the electron confined in the neighboring quantum dot when the (gate-controllable) overlapping with the junction is significant and pumping frequency tuned. The pumping scheme that induces transitions is all-electrical: obtained by applying oscillating voltages to control gates and thus enables for scalable qubit architectures. We also report another possibility of valley-qubit manipulation by accumulating non-Abelian valley Berry phase. To model nanodevice we solve the time-dependent Schrödinger-Poisson equations in a tight-binding approach and obtain exact time-evolution of the valley-qubit system. |
| title | Electrical manipulation of valley-qubit and valley geometric phase in lateral monolayer heterostructures |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2209.14445 |