Remote Surface Optical Phonon Scattering in Ferroelectric Ba$_{0.6}$Sr$_{0.4}$TiO$_{3}$ Gated Graphene
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arXiv
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| Autores principales: | , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2022
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| _version_ | 1866911912920350720 |
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| author | Chen, Hanying Li, Tianlin Hao, Yifei Rajapitamahuni, Anil Xiao, Zhiyong Schoeche, Stefan Schubert, Mathias Hong, Xia |
| author_facet | Chen, Hanying Li, Tianlin Hao, Yifei Rajapitamahuni, Anil Xiao, Zhiyong Schoeche, Stefan Schubert, Mathias Hong, Xia |
| contents | We report the effect of remote surface optical (RSO) phonon scattering on carrier mobility in monolayer graphene gated by ferroelectric oxide. We fabricate monolayer graphene transistors back-gated by epitaxial (001) Ba$_{0.6}$Sr$_{0.4}$TiO$_{3}$ films, with field effect mobility up to 23,000 cm$^{2}$V$^{-1}$s$^{-1}$ achieved. Switching the ferroelectric polarization induces nonvolatile modulation of resistance and quantum Hall effect in graphene at low temperatures. Ellipsometry spectroscopy studies reveal four pairs of optical phonon modes in Ba$_{0.6}$Sr$_{0.4}$TiO$_{3}$, from which we extract the RSO phonon frequencies. The temperature dependence of resistivity in graphene can be well accounted for by considering the scattering from the intrinsic longitudinal acoustic phonon and the RSO phonon, with the latter dominated by the mode at 35.8 meV. Our study reveals the room temperature mobility limit of ferroelectric-gated graphene transistors imposed by RSO phonon scattering. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2209_15527 |
| institution | arXiv |
| publishDate | 2022 |
| record_format | arxiv |
| spellingShingle | Remote Surface Optical Phonon Scattering in Ferroelectric Ba$_{0.6}$Sr$_{0.4}$TiO$_{3}$ Gated Graphene Chen, Hanying Li, Tianlin Hao, Yifei Rajapitamahuni, Anil Xiao, Zhiyong Schoeche, Stefan Schubert, Mathias Hong, Xia Mesoscale and Nanoscale Physics Materials Science We report the effect of remote surface optical (RSO) phonon scattering on carrier mobility in monolayer graphene gated by ferroelectric oxide. We fabricate monolayer graphene transistors back-gated by epitaxial (001) Ba$_{0.6}$Sr$_{0.4}$TiO$_{3}$ films, with field effect mobility up to 23,000 cm$^{2}$V$^{-1}$s$^{-1}$ achieved. Switching the ferroelectric polarization induces nonvolatile modulation of resistance and quantum Hall effect in graphene at low temperatures. Ellipsometry spectroscopy studies reveal four pairs of optical phonon modes in Ba$_{0.6}$Sr$_{0.4}$TiO$_{3}$, from which we extract the RSO phonon frequencies. The temperature dependence of resistivity in graphene can be well accounted for by considering the scattering from the intrinsic longitudinal acoustic phonon and the RSO phonon, with the latter dominated by the mode at 35.8 meV. Our study reveals the room temperature mobility limit of ferroelectric-gated graphene transistors imposed by RSO phonon scattering. |
| title | Remote Surface Optical Phonon Scattering in Ferroelectric Ba$_{0.6}$Sr$_{0.4}$TiO$_{3}$ Gated Graphene |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2209.15527 |