Establishing Epitaxial Connectedness in Multi-Stacking: The Survival of Thru-Holes in Thru-Hole Epitaxy
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arXiv
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| Autori principali: | , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2022
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| _version_ | 1866914671673475072 |
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| author | Lee, Youngjun Lee, Seungjun Choi, Jaewu Kim, Chinkyo Kwon, Young-Kyun |
| author_facet | Lee, Youngjun Lee, Seungjun Choi, Jaewu Kim, Chinkyo Kwon, Young-Kyun |
| contents | Thru-hole epitaxy has recently been reported to be able to grow readily detachable domains crystallographically aligned with the underlying substrate over 2D mask material transferred onto a substrate. [Jang \textit{et al.}, \textit{Adv. Mater. Interfaces}, \textbf{2023} \textit{10}, 4 2201406] While the experimental demonstration of thru-hole epitaxy of GaN over multiple stacks of $h$-BN was evident, the detailed mechanism of how small holes in each stack of $h$-BN survived as thru-holes during multiple stacking of $h$-BN was not intuitively clear. Here, we use Monte Carlo simulations to investigate the conditions under which holes in each stack of 2D mask layers can survive as thru-holes during multiple stacking. If holes are highly anisotropic in shape by connecting smaller holes in a particular direction, thru-holes can be maintained with a high survival rate per stack, establishing more epitaxial connectedness. Our work verifies and supports that thru-hole epitaxy is attributed to the epitaxial connectedness established by thru-holes surviving even through multiple stacks. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2210_04753 |
| institution | arXiv |
| publishDate | 2022 |
| record_format | arxiv |
| spellingShingle | Establishing Epitaxial Connectedness in Multi-Stacking: The Survival of Thru-Holes in Thru-Hole Epitaxy Lee, Youngjun Lee, Seungjun Choi, Jaewu Kim, Chinkyo Kwon, Young-Kyun Materials Science Applied Physics Thru-hole epitaxy has recently been reported to be able to grow readily detachable domains crystallographically aligned with the underlying substrate over 2D mask material transferred onto a substrate. [Jang \textit{et al.}, \textit{Adv. Mater. Interfaces}, \textbf{2023} \textit{10}, 4 2201406] While the experimental demonstration of thru-hole epitaxy of GaN over multiple stacks of $h$-BN was evident, the detailed mechanism of how small holes in each stack of $h$-BN survived as thru-holes during multiple stacking of $h$-BN was not intuitively clear. Here, we use Monte Carlo simulations to investigate the conditions under which holes in each stack of 2D mask layers can survive as thru-holes during multiple stacking. If holes are highly anisotropic in shape by connecting smaller holes in a particular direction, thru-holes can be maintained with a high survival rate per stack, establishing more epitaxial connectedness. Our work verifies and supports that thru-hole epitaxy is attributed to the epitaxial connectedness established by thru-holes surviving even through multiple stacks. |
| title | Establishing Epitaxial Connectedness in Multi-Stacking: The Survival of Thru-Holes in Thru-Hole Epitaxy |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2210.04753 |