Nonvolatile Electrochemical Random-Access Memory Under Short Circuit
Fuente:
arXiv
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| Autori principali: | , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2022
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| Soggetti: | |
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| _version_ | 1866910657427800064 |
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| author | Kim, Diana Watkins, Virgil Cline, Laszlo Li, Jingxian Sun, Kai Sugar, Joshua D. Fuller, Elliot J. Talin, A. Alec Li, Yiyang |
| author_facet | Kim, Diana Watkins, Virgil Cline, Laszlo Li, Jingxian Sun, Kai Sugar, Joshua D. Fuller, Elliot J. Talin, A. Alec Li, Yiyang |
| contents | Electrochemical random-access memory (ECRAM) is a recently developed and highly promising analog resistive memory element for in-memory computing. One longstanding challenge of ECRAM is attaining retention time beyond a few hours. This short retention has precluded ECRAM from being considered for inference classification in deep neural networks, which is likely the largest opportunity for in-memory computing. In this work, we develop an ECRAM cell with orders of magnitude longer retention than previously achieved, and which we anticipate to exceed 10 years at 85C. We hypothesize that the origin of this exceptional retention is phase separation, which enables the formation of multiple effectively equilibrium resistance states. This work highlights the promises and opportunities to use phase separation to yield ECRAM cells with exceptionally long, and potentially permanent, retention times. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2210_06658 |
| institution | arXiv |
| publishDate | 2022 |
| record_format | arxiv |
| spellingShingle | Nonvolatile Electrochemical Random-Access Memory Under Short Circuit Kim, Diana Watkins, Virgil Cline, Laszlo Li, Jingxian Sun, Kai Sugar, Joshua D. Fuller, Elliot J. Talin, A. Alec Li, Yiyang Emerging Technologies Electrochemical random-access memory (ECRAM) is a recently developed and highly promising analog resistive memory element for in-memory computing. One longstanding challenge of ECRAM is attaining retention time beyond a few hours. This short retention has precluded ECRAM from being considered for inference classification in deep neural networks, which is likely the largest opportunity for in-memory computing. In this work, we develop an ECRAM cell with orders of magnitude longer retention than previously achieved, and which we anticipate to exceed 10 years at 85C. We hypothesize that the origin of this exceptional retention is phase separation, which enables the formation of multiple effectively equilibrium resistance states. This work highlights the promises and opportunities to use phase separation to yield ECRAM cells with exceptionally long, and potentially permanent, retention times. |
| title | Nonvolatile Electrochemical Random-Access Memory Under Short Circuit |
| topic | Emerging Technologies |
| url | https://arxiv.org/abs/2210.06658 |