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Main Authors: Fazio, Tommaso, Fisicaro, Giuseppe, Deretzis, Ioannis, Paladino, Elisabetta, La Magna, Antonino
Format: Preprint
Published: 2022
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Online Access:https://arxiv.org/abs/2211.00341
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author Fazio, Tommaso
Fisicaro, Giuseppe
Deretzis, Ioannis
Paladino, Elisabetta
La Magna, Antonino
author_facet Fazio, Tommaso
Fisicaro, Giuseppe
Deretzis, Ioannis
Paladino, Elisabetta
La Magna, Antonino
contents We study the silicon vacancy in 3C SiC as a color center of interest in the field of Quantum Technologies, focusing on its magnetic interaction with the SiC nuclear spin bath containing Si29 and C13 nuclei in their natural isotopic concentration. We calculate the system energetic and magnetic properties with ab initio methods based on the Density Functional Theory, identifying the neutral charge state of the silicon vacancy as the most favorable for p doped 3C SiC systems. We thereon evaluate the Free Induction Decay and the Hahn echo sequence on the electron spin interacting with the nuclear spin bath. Here, the Electron Spin Echo Envelope Modulation phenomenon, due to single nuclear spin flipping processes, and the overall decay are highlighted in the context of the Cluster Correlation Expansion theory. We find a non exponential coherence decay, which is a typical feature of solid state qubits subjected to low frequency 1/f noise from the environment.
format Preprint
id arxiv_https___arxiv_org_abs_2211_00341
institution arXiv
publishDate 2022
record_format arxiv
spellingShingle Stability and decoherence analysis of the silicon vacancy in 3C-SiC
Fazio, Tommaso
Fisicaro, Giuseppe
Deretzis, Ioannis
Paladino, Elisabetta
La Magna, Antonino
Materials Science
Computational Physics
We study the silicon vacancy in 3C SiC as a color center of interest in the field of Quantum Technologies, focusing on its magnetic interaction with the SiC nuclear spin bath containing Si29 and C13 nuclei in their natural isotopic concentration. We calculate the system energetic and magnetic properties with ab initio methods based on the Density Functional Theory, identifying the neutral charge state of the silicon vacancy as the most favorable for p doped 3C SiC systems. We thereon evaluate the Free Induction Decay and the Hahn echo sequence on the electron spin interacting with the nuclear spin bath. Here, the Electron Spin Echo Envelope Modulation phenomenon, due to single nuclear spin flipping processes, and the overall decay are highlighted in the context of the Cluster Correlation Expansion theory. We find a non exponential coherence decay, which is a typical feature of solid state qubits subjected to low frequency 1/f noise from the environment.
title Stability and decoherence analysis of the silicon vacancy in 3C-SiC
topic Materials Science
Computational Physics
url https://arxiv.org/abs/2211.00341