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| Main Authors: | , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2022
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2211.05309 |
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| _version_ | 1866917585876942848 |
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| author | Tang, Zhidong Wang, Zewei Yuan, Yumeng He, Chang Luo, Xin Guo, Ao Chen, Renhe Hu, Yongqi Yang, Longfei Cao, Chengwei Liu, Linlin Yu, Liujiang Shang, Ganbing Cao, Yongfeng Chen, Shoumian Zhao, Yuhang Hu, Shaojian Kou, Xufeng |
| author_facet | Tang, Zhidong Wang, Zewei Yuan, Yumeng He, Chang Luo, Xin Guo, Ao Chen, Renhe Hu, Yongqi Yang, Longfei Cao, Chengwei Liu, Linlin Yu, Liujiang Shang, Ganbing Cao, Yongfeng Chen, Shoumian Zhao, Yuhang Hu, Shaojian Kou, Xufeng |
| contents | This paper outlines the establishment of a generic cryogenic CMOS database in which key electrical parameters and transfer characteristics of the MOSFETs are quantified as functions of device size, temperature/frequency responses. Meanwhile, comprehensive device statistical study is conducted to evaluate the influence of variation and mismatch effects at low temperatures. Furthermore, by incorporating the Cryo-CMOS compact model into the process design kit (PDK), the cryogenic 4 Kb SRAM, 5-bit flash ADC and 8-bit current steering DAC are designed, and their performance is readily investigated and optimized on the EDA-compatible platform, hence laying a solid foundation for large-scale cryogenic IC design. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2211_05309 |
| institution | arXiv |
| publishDate | 2022 |
| record_format | arxiv |
| spellingShingle | Generic Cryo-CMOS Device Modeling and EDACompatible Platform for Reliable Cryogenic IC Design Tang, Zhidong Wang, Zewei Yuan, Yumeng He, Chang Luo, Xin Guo, Ao Chen, Renhe Hu, Yongqi Yang, Longfei Cao, Chengwei Liu, Linlin Yu, Liujiang Shang, Ganbing Cao, Yongfeng Chen, Shoumian Zhao, Yuhang Hu, Shaojian Kou, Xufeng Systems and Control This paper outlines the establishment of a generic cryogenic CMOS database in which key electrical parameters and transfer characteristics of the MOSFETs are quantified as functions of device size, temperature/frequency responses. Meanwhile, comprehensive device statistical study is conducted to evaluate the influence of variation and mismatch effects at low temperatures. Furthermore, by incorporating the Cryo-CMOS compact model into the process design kit (PDK), the cryogenic 4 Kb SRAM, 5-bit flash ADC and 8-bit current steering DAC are designed, and their performance is readily investigated and optimized on the EDA-compatible platform, hence laying a solid foundation for large-scale cryogenic IC design. |
| title | Generic Cryo-CMOS Device Modeling and EDACompatible Platform for Reliable Cryogenic IC Design |
| topic | Systems and Control |
| url | https://arxiv.org/abs/2211.05309 |