Impact of Boron doping to the tunneling magnetoresistance of Heusler alloy Co2FeAl
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arXiv
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| Auteurs principaux: | , , , , , , , , , |
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| Format: | Preprint |
| Publié: |
2022
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| _version_ | 1866910287535276032 |
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| author | Habiboglu, Ali Chandak, Yash Khanal, Pravin Zhou, Bowei Eckel, Carter Warrilow, Jacob Cutshall Kennedy O'Brien, John Schaibley, John R. Leroy, Brian J. Wang, Wei-Gang |
| author_facet | Habiboglu, Ali Chandak, Yash Khanal, Pravin Zhou, Bowei Eckel, Carter Warrilow, Jacob Cutshall Kennedy O'Brien, John Schaibley, John R. Leroy, Brian J. Wang, Wei-Gang |
| contents | Heusler alloys based magnetic tunnel junctions can potentially provide high magnetoresistance, small damping and fast switching. Here junctions with Co2FeAl as a ferromagnetic electrode are fabricated by room temperature sputtering on Si/SiO2 substrates. The doping of Boron in Co2FeAl is found to have a large positive impact on the structural, magnetic and transport properties of the junctions, with a reduced interfacial roughness and substantial improved tunneling magnetoresistance. A two-level magnetoresistance is also observed in samples annealed at low temperature, which is believed to be related to the memristive effect of the tunnel barrier with impurities. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2211_12448 |
| institution | arXiv |
| publishDate | 2022 |
| record_format | arxiv |
| spellingShingle | Impact of Boron doping to the tunneling magnetoresistance of Heusler alloy Co2FeAl Habiboglu, Ali Chandak, Yash Khanal, Pravin Zhou, Bowei Eckel, Carter Warrilow, Jacob Cutshall Kennedy O'Brien, John Schaibley, John R. Leroy, Brian J. Wang, Wei-Gang Materials Science Other Condensed Matter Heusler alloys based magnetic tunnel junctions can potentially provide high magnetoresistance, small damping and fast switching. Here junctions with Co2FeAl as a ferromagnetic electrode are fabricated by room temperature sputtering on Si/SiO2 substrates. The doping of Boron in Co2FeAl is found to have a large positive impact on the structural, magnetic and transport properties of the junctions, with a reduced interfacial roughness and substantial improved tunneling magnetoresistance. A two-level magnetoresistance is also observed in samples annealed at low temperature, which is believed to be related to the memristive effect of the tunnel barrier with impurities. |
| title | Impact of Boron doping to the tunneling magnetoresistance of Heusler alloy Co2FeAl |
| topic | Materials Science Other Condensed Matter |
| url | https://arxiv.org/abs/2211.12448 |