One-dimensional electron localization in semiconductors coupled to electromagnetic cavities

Fuente: arXiv
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Main Authors: Svintsov, Dmitry, Alymov, Georgy, Devizorova, Zhanna, Martin-Moreno, Luis
Format: Preprint
Published: 2022
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_version_ 1866911765656240128
author Svintsov, Dmitry
Alymov, Georgy
Devizorova, Zhanna
Martin-Moreno, Luis
author_facet Svintsov, Dmitry
Alymov, Georgy
Devizorova, Zhanna
Martin-Moreno, Luis
contents Electrical conductivity of one-dimensional (1d) disordered solids decays exponentially with their length, which is a celebrated manifestation of the localization phenomenon. Here, we study the modifications of localized conductivity induced by placement of 1d semiconductors inside of single-mode electromagnetic cavities, focusing on the regime of non-degenerate doping. We use the Green's function technique modified for the non-perturbative account of cavity excited states, and including both coherent electron-cavity effects (i.e. electron motion in the zero-point fluctuating field) and incoherent processes of photon emission upon tunneling. The energy spectrum of electron transmission in the cavity acquires Fano-type resonances associated with virtual photon emission, passage along the resonant level, and photon re-absorption. The quality factor of the Fano resonance depends on whether the intermediate state is coupled to the leads, and reaches its maximum when this state is localized deep in the disorder potential. Coupling to the cavity also elevates the energies of the shallow bound states, bringing them to the conduction band bottom. Such an effect leads to the enhancement of the low-temperature conductance.
format Preprint
id arxiv_https___arxiv_org_abs_2211_13075
institution arXiv
publishDate 2022
record_format arxiv
spellingShingle One-dimensional electron localization in semiconductors coupled to electromagnetic cavities
Svintsov, Dmitry
Alymov, Georgy
Devizorova, Zhanna
Martin-Moreno, Luis
Mesoscale and Nanoscale Physics
Optics
Quantum Physics
Electrical conductivity of one-dimensional (1d) disordered solids decays exponentially with their length, which is a celebrated manifestation of the localization phenomenon. Here, we study the modifications of localized conductivity induced by placement of 1d semiconductors inside of single-mode electromagnetic cavities, focusing on the regime of non-degenerate doping. We use the Green's function technique modified for the non-perturbative account of cavity excited states, and including both coherent electron-cavity effects (i.e. electron motion in the zero-point fluctuating field) and incoherent processes of photon emission upon tunneling. The energy spectrum of electron transmission in the cavity acquires Fano-type resonances associated with virtual photon emission, passage along the resonant level, and photon re-absorption. The quality factor of the Fano resonance depends on whether the intermediate state is coupled to the leads, and reaches its maximum when this state is localized deep in the disorder potential. Coupling to the cavity also elevates the energies of the shallow bound states, bringing them to the conduction band bottom. Such an effect leads to the enhancement of the low-temperature conductance.
title One-dimensional electron localization in semiconductors coupled to electromagnetic cavities
topic Mesoscale and Nanoscale Physics
Optics
Quantum Physics
url https://arxiv.org/abs/2211.13075