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| Main Authors: | , , , , , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2022
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2211.15896 |
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| _version_ | 1866913694213996544 |
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| author | Luo, Yongjian Wang, Changan Chen, Chao Gao, Yuan Sun, Fei Li, Caiwen Yin, Xiaozhe Luo, Chunlai Kentsch, Ulrich Cai, Xiangbin Bai, Mei Fan, Zhen Qin, Minghui Zeng, Min Dai, Jiyan Zhou, Guofu Lu, Xubing Lou, Xiaojie Zhou, Shengqiang Gao, Xingsen Chen, Deyang Liu, Jun-Ming |
| author_facet | Luo, Yongjian Wang, Changan Chen, Chao Gao, Yuan Sun, Fei Li, Caiwen Yin, Xiaozhe Luo, Chunlai Kentsch, Ulrich Cai, Xiangbin Bai, Mei Fan, Zhen Qin, Minghui Zeng, Min Dai, Jiyan Zhou, Guofu Lu, Xubing Lou, Xiaojie Zhou, Shengqiang Gao, Xingsen Chen, Deyang Liu, Jun-Ming |
| contents | Dielectric capacitors are widely used in pulsed power electronic devices due to their ultrahigh power densities and extremely fast charge/discharge speed. To achieve enhanced energy storage density, both maximum polarization (Pmax) and breakdown strength (Eb) need to be improved simultaneously. However, these two key parameters are inversely correlated. In this study, order-disorder transition induced polar nanoregions (PNRs) have been achieved in PbZrO3 thin films by making use of the low-energy ion implantation, enabling us overcome the trade-off between high polarizability and breakdown strength, which leads to the tripling of the energy storage density from 20.5 J/cm3 to 62.3 J/cm3 as well as the great enhancement of breakdown strength. This approach could be extended to other dielectric oxides to improve the energy storage performance, providing a new pathway for tailoring the oxide functionalities. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2211_15896 |
| institution | arXiv |
| publishDate | 2022 |
| record_format | arxiv |
| spellingShingle | Tripling energy storage density through order-disorder transition induced polar nanoregions in PbZrO3 thin films by ion implantation Luo, Yongjian Wang, Changan Chen, Chao Gao, Yuan Sun, Fei Li, Caiwen Yin, Xiaozhe Luo, Chunlai Kentsch, Ulrich Cai, Xiangbin Bai, Mei Fan, Zhen Qin, Minghui Zeng, Min Dai, Jiyan Zhou, Guofu Lu, Xubing Lou, Xiaojie Zhou, Shengqiang Gao, Xingsen Chen, Deyang Liu, Jun-Ming Materials Science Dielectric capacitors are widely used in pulsed power electronic devices due to their ultrahigh power densities and extremely fast charge/discharge speed. To achieve enhanced energy storage density, both maximum polarization (Pmax) and breakdown strength (Eb) need to be improved simultaneously. However, these two key parameters are inversely correlated. In this study, order-disorder transition induced polar nanoregions (PNRs) have been achieved in PbZrO3 thin films by making use of the low-energy ion implantation, enabling us overcome the trade-off between high polarizability and breakdown strength, which leads to the tripling of the energy storage density from 20.5 J/cm3 to 62.3 J/cm3 as well as the great enhancement of breakdown strength. This approach could be extended to other dielectric oxides to improve the energy storage performance, providing a new pathway for tailoring the oxide functionalities. |
| title | Tripling energy storage density through order-disorder transition induced polar nanoregions in PbZrO3 thin films by ion implantation |
| topic | Materials Science |
| url | https://arxiv.org/abs/2211.15896 |