Manufacturing high-Q superconducting α-tantalum resonators on silicon wafers
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arXiv
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| Main Authors: | , , , , , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
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2022
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| _version_ | 1866929372128083968 |
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| author | Lozano, D. P. Mongillo, M. Piao, X. Couet, S. Wan, D. Canvel, Y. Vadiraj, A. M. Ivanov, Ts. Verjauw, J. Acharya, R. Van Damme, J. Mohiyaddin, F. A. Jussot, J. Gowda, P. P. Pacco, A. Raes, B. Van de Vondel, J. Radu, I. P. Govoreanu, B. Swerts, J. Potočnik, A. De Greve, K. |
| author_facet | Lozano, D. P. Mongillo, M. Piao, X. Couet, S. Wan, D. Canvel, Y. Vadiraj, A. M. Ivanov, Ts. Verjauw, J. Acharya, R. Van Damme, J. Mohiyaddin, F. A. Jussot, J. Gowda, P. P. Pacco, A. Raes, B. Van de Vondel, J. Radu, I. P. Govoreanu, B. Swerts, J. Potočnik, A. De Greve, K. |
| contents | The performance of state-of-the-art superconducting quantum devices is currently limited by microwave dielectric losses at different surfaces and interfaces. α-tantalum is a superconductor that has proven effective in reducing dielectric loss and improving device performance due to its thin low-loss oxide. However, without the use of a seed layer, this tantalum phase has so far only been realised on sapphire substrates, which is incompatible with advanced processing in industry-scale fabrication facilities. Here, we demonstrate the fabrication of high-quality factor α-tantalum resonators directly on silicon wafers over a variety of metal deposition conditions and perform a comprehensive material and electrical characterization study. By comparing experiments with simulated resonator loss, we demonstrate that two-level-system loss is dominated by surface oxide contributions and not the substrate-metal interface. Our study paves the way to large scale manufacturing of low-loss superconducting circuits and to materials-driven advancements in superconducting circuit performance. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2211_16437 |
| institution | arXiv |
| publishDate | 2022 |
| record_format | arxiv |
| spellingShingle | Manufacturing high-Q superconducting α-tantalum resonators on silicon wafers Lozano, D. P. Mongillo, M. Piao, X. Couet, S. Wan, D. Canvel, Y. Vadiraj, A. M. Ivanov, Ts. Verjauw, J. Acharya, R. Van Damme, J. Mohiyaddin, F. A. Jussot, J. Gowda, P. P. Pacco, A. Raes, B. Van de Vondel, J. Radu, I. P. Govoreanu, B. Swerts, J. Potočnik, A. De Greve, K. Quantum Physics Materials Science Applied Physics The performance of state-of-the-art superconducting quantum devices is currently limited by microwave dielectric losses at different surfaces and interfaces. α-tantalum is a superconductor that has proven effective in reducing dielectric loss and improving device performance due to its thin low-loss oxide. However, without the use of a seed layer, this tantalum phase has so far only been realised on sapphire substrates, which is incompatible with advanced processing in industry-scale fabrication facilities. Here, we demonstrate the fabrication of high-quality factor α-tantalum resonators directly on silicon wafers over a variety of metal deposition conditions and perform a comprehensive material and electrical characterization study. By comparing experiments with simulated resonator loss, we demonstrate that two-level-system loss is dominated by surface oxide contributions and not the substrate-metal interface. Our study paves the way to large scale manufacturing of low-loss superconducting circuits and to materials-driven advancements in superconducting circuit performance. |
| title | Manufacturing high-Q superconducting α-tantalum resonators on silicon wafers |
| topic | Quantum Physics Materials Science Applied Physics |
| url | https://arxiv.org/abs/2211.16437 |