Hofstadter states and reentrant charge order in a semiconductor moiré lattice
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| Main Authors: | , , , , , , , , , |
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| Format: | Preprint |
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2022
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| _version_ | 1866911910224461824 |
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| author | Kometter, Carlos R. Yu, Jiachen Devakul, Trithep Reddy, Aidan P. Zhang, Yang Foutty, Benjamin A. Watanabe, Kenji Taniguchi, Takashi Fu, Liang Feldman, Benjamin E. |
| author_facet | Kometter, Carlos R. Yu, Jiachen Devakul, Trithep Reddy, Aidan P. Zhang, Yang Foutty, Benjamin A. Watanabe, Kenji Taniguchi, Takashi Fu, Liang Feldman, Benjamin E. |
| contents | The emergence of moiré materials with flat bands provides a platform to systematically investigate and precisely control correlated electronic phases. Here, we report local electronic compressibility measurements of a twisted WSe$_2$/MoSe$_2$ heterobilayer which reveal a rich phase diagram of interpenetrating Hofstadter states and electron solids. We show that this reflects the presence of both flat and dispersive moiré bands whose relative energies, and therefore occupations, are tuned by density and magnetic field. At low densities, competition between moiré bands leads to a transition from commensurate arrangements of singlets at doubly occupied sites to triplet configurations at high fields. Hofstadter states (i.e., Chern insulators) are generally favored at high densities as dispersive bands are populated, but are suppressed by an intervening region of reentrant charge-ordered states in which holes originating from multiple bands cooperatively crystallize. Our results reveal the key microscopic ingredients that favor distinct correlated ground states in semiconductor moiré systems, and they demonstrate an emergent lattice model system in which both interactions and band dispersion can be experimentally controlled. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2212_05068 |
| institution | arXiv |
| publishDate | 2022 |
| record_format | arxiv |
| spellingShingle | Hofstadter states and reentrant charge order in a semiconductor moiré lattice Kometter, Carlos R. Yu, Jiachen Devakul, Trithep Reddy, Aidan P. Zhang, Yang Foutty, Benjamin A. Watanabe, Kenji Taniguchi, Takashi Fu, Liang Feldman, Benjamin E. Mesoscale and Nanoscale Physics The emergence of moiré materials with flat bands provides a platform to systematically investigate and precisely control correlated electronic phases. Here, we report local electronic compressibility measurements of a twisted WSe$_2$/MoSe$_2$ heterobilayer which reveal a rich phase diagram of interpenetrating Hofstadter states and electron solids. We show that this reflects the presence of both flat and dispersive moiré bands whose relative energies, and therefore occupations, are tuned by density and magnetic field. At low densities, competition between moiré bands leads to a transition from commensurate arrangements of singlets at doubly occupied sites to triplet configurations at high fields. Hofstadter states (i.e., Chern insulators) are generally favored at high densities as dispersive bands are populated, but are suppressed by an intervening region of reentrant charge-ordered states in which holes originating from multiple bands cooperatively crystallize. Our results reveal the key microscopic ingredients that favor distinct correlated ground states in semiconductor moiré systems, and they demonstrate an emergent lattice model system in which both interactions and band dispersion can be experimentally controlled. |
| title | Hofstadter states and reentrant charge order in a semiconductor moiré lattice |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2212.05068 |