In-plane gate induced transition asymmetry of spin-resolved Landau levels in InAs-based quantum wells

Documenti analoghi

• Electrical and terahertz magnetospectroscopy studies of laser-patterned micro- and nanostructures on InAs-based heterostructures
  di: Chiatti, Olivio, et al.
  Pubblicazione: (2014)
• Low-temperature magnetoresistance hysteresis in Vanadium-doped Bi$_{2}$Te$_{2.4}$Se$_{0.6}$ bulk topological insulators
  di: Düzel, Birkan, et al.
  Pubblicazione: (2022)
• Time-resolved measurement of ambipolar edge magnetoplasmon transport in InAs/InGaSb composite quantum wells
  di: Kamata, Hiroshi, et al.
  Pubblicazione: (2022)
• Fabrication and characterization of InAs nanowire-based quantum dot structures utilizing buried bottom gates
  di: Faustmann, Anton, et al.
  Pubblicazione: (2024)
• Switching dynamics in Al/InAs nanowire-based gate-controlled superconducting switch
  di: Elalaily, Tosson, et al.
  Pubblicazione: (2023)