Low-temperature magnetoresistance hysteresis in Vanadium-doped Bi$_{2}$Te$_{2.4}$Se$_{0.6}$ bulk topological insulators
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arXiv
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| Autori principali: | , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2022
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| _version_ | 1866910432631980032 |
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| author | Düzel, Birkan Riha, Christian Graser, Karl Chiatti, Olivio Fischer, Saskia F. |
| author_facet | Düzel, Birkan Riha, Christian Graser, Karl Chiatti, Olivio Fischer, Saskia F. |
| contents | Bi$_{2}$Te$_{2.4}$Se$_{0.6}$ single crystals show gapless topological surface states and doping ($x$) with Vanadium allows to shift the chemical potential in the bulk band gap. Accordingly, the resistivity, carrier density, and mobility are constant below 10 K and the magnetoresistance shows weak antilocalization as expected for low-temperature transport properties dominated by gapless surface states of so-called three-dimensional topological "insulators". However, the magnetoresistance also shows a hysteresis depending on the sweep rate and the magnetic field direction. Here, we provide evidence that such magnetoresistance hysteresis is enhanced if both three-dimensional bulk states and quasi-two-dimensional topological states contribute to the transport ($x$ = 0 and 0.03), and it is mostly suppressed if the topological states govern transport ($x$ = 0.015). The results are discussed in terms of spin-dependent scattering between the different available states |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2212_14078 |
| institution | arXiv |
| publishDate | 2022 |
| record_format | arxiv |
| spellingShingle | Low-temperature magnetoresistance hysteresis in Vanadium-doped Bi$_{2}$Te$_{2.4}$Se$_{0.6}$ bulk topological insulators Düzel, Birkan Riha, Christian Graser, Karl Chiatti, Olivio Fischer, Saskia F. Mesoscale and Nanoscale Physics Other Condensed Matter Bi$_{2}$Te$_{2.4}$Se$_{0.6}$ single crystals show gapless topological surface states and doping ($x$) with Vanadium allows to shift the chemical potential in the bulk band gap. Accordingly, the resistivity, carrier density, and mobility are constant below 10 K and the magnetoresistance shows weak antilocalization as expected for low-temperature transport properties dominated by gapless surface states of so-called three-dimensional topological "insulators". However, the magnetoresistance also shows a hysteresis depending on the sweep rate and the magnetic field direction. Here, we provide evidence that such magnetoresistance hysteresis is enhanced if both three-dimensional bulk states and quasi-two-dimensional topological states contribute to the transport ($x$ = 0 and 0.03), and it is mostly suppressed if the topological states govern transport ($x$ = 0.015). The results are discussed in terms of spin-dependent scattering between the different available states |
| title | Low-temperature magnetoresistance hysteresis in Vanadium-doped Bi$_{2}$Te$_{2.4}$Se$_{0.6}$ bulk topological insulators |
| topic | Mesoscale and Nanoscale Physics Other Condensed Matter |
| url | https://arxiv.org/abs/2212.14078 |