A robust weak topological insulator in a bismuth halide Bi4Br2I2

Fuente: arXiv
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Auteurs principaux: Noguchi, Ryo, Kobayashi, Masaru, Kawaguchi, Kaishu, Lin, Chun, Tanaka, Hiroaki, Kuroda, Kenta, Harasawa, Ayumi, Kandyba, Viktor, Cattelan, Mattia, Barinov, Alexei, Hashimoto, Makoto, Lu, Donghui, Sasagawa, Takao, Kondo, Takeshi
Format: Preprint
Publié: 2023
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author Noguchi, Ryo
Kobayashi, Masaru
Kawaguchi, Kaishu
Lin, Chun
Tanaka, Hiroaki
Kuroda, Kenta
Harasawa, Ayumi
Kandyba, Viktor
Cattelan, Mattia
Barinov, Alexei
Hashimoto, Makoto
Lu, Donghui
Sasagawa, Takao
Kondo, Takeshi
author_facet Noguchi, Ryo
Kobayashi, Masaru
Kawaguchi, Kaishu
Lin, Chun
Tanaka, Hiroaki
Kuroda, Kenta
Harasawa, Ayumi
Kandyba, Viktor
Cattelan, Mattia
Barinov, Alexei
Hashimoto, Makoto
Lu, Donghui
Sasagawa, Takao
Kondo, Takeshi
contents We apply a topological material design concept for selecting a bulk topology of 3D crystals by different van-der-Waals stacking of 2D topological insulator layers, and find a bismuth halide Bi4Br2I2 to be an ideal weak topological insulator (WTI) with the largest band gap (~230 meV) among all the WTI candidates, by means of angle-resolved photoemission spectroscopy (ARPES), density functional theory (DFT) calculations, and resistivity measurements. Our results vastly expand future opportunities for fundamental research and device applications with a robust WTI.
format Preprint
id arxiv_https___arxiv_org_abs_2301_07158
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle A robust weak topological insulator in a bismuth halide Bi4Br2I2
Noguchi, Ryo
Kobayashi, Masaru
Kawaguchi, Kaishu
Lin, Chun
Tanaka, Hiroaki
Kuroda, Kenta
Harasawa, Ayumi
Kandyba, Viktor
Cattelan, Mattia
Barinov, Alexei
Hashimoto, Makoto
Lu, Donghui
Sasagawa, Takao
Kondo, Takeshi
Materials Science
We apply a topological material design concept for selecting a bulk topology of 3D crystals by different van-der-Waals stacking of 2D topological insulator layers, and find a bismuth halide Bi4Br2I2 to be an ideal weak topological insulator (WTI) with the largest band gap (~230 meV) among all the WTI candidates, by means of angle-resolved photoemission spectroscopy (ARPES), density functional theory (DFT) calculations, and resistivity measurements. Our results vastly expand future opportunities for fundamental research and device applications with a robust WTI.
title A robust weak topological insulator in a bismuth halide Bi4Br2I2
topic Materials Science
url https://arxiv.org/abs/2301.07158