Inversion Symmetry Breaking in Epitaxial Ultrathin Bi (111) Films
Fuente:
arXiv
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| Auteurs principaux: | , , , , , , , , , , |
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| Format: | Preprint |
| Publié: |
2023
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| _version_ | 1866915250242060288 |
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| author | Inbar, Hadass S. Zubair, Muhammad Dong, Jason T. Engel, Aaron N Dempsey, Connor P. Chang, Yu Hao Nishihaya, Shinichi Khalid, Shoaib Fedorov, Alexei V. Janotti, Anderson Palmstrøm, Chris J. |
| author_facet | Inbar, Hadass S. Zubair, Muhammad Dong, Jason T. Engel, Aaron N Dempsey, Connor P. Chang, Yu Hao Nishihaya, Shinichi Khalid, Shoaib Fedorov, Alexei V. Janotti, Anderson Palmstrøm, Chris J. |
| contents | Bismuth (Bi) films hold potential for spintronic devices and topological one-dimensional edge transport. Large-area high-quality (111) Bi ultrathin films are grown on InSb (111)B substrates. Strong film-substrate interactions epitaxially stabilize the (111) orientation and lead to inversion symmetry breaking. We resolve the longstanding controversy over the Z_2 topological assignment of bismuth and show that the surface states are topologically trivial. Our results demonstrate that interfacial bonds prevent the semimetal-to-semiconductor transition predicted for freestanding bismuth layers, highlighting the importance of controlled functionalization and surface passivation in two-dimensional materials. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2302_00803 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Inversion Symmetry Breaking in Epitaxial Ultrathin Bi (111) Films Inbar, Hadass S. Zubair, Muhammad Dong, Jason T. Engel, Aaron N Dempsey, Connor P. Chang, Yu Hao Nishihaya, Shinichi Khalid, Shoaib Fedorov, Alexei V. Janotti, Anderson Palmstrøm, Chris J. Materials Science Bismuth (Bi) films hold potential for spintronic devices and topological one-dimensional edge transport. Large-area high-quality (111) Bi ultrathin films are grown on InSb (111)B substrates. Strong film-substrate interactions epitaxially stabilize the (111) orientation and lead to inversion symmetry breaking. We resolve the longstanding controversy over the Z_2 topological assignment of bismuth and show that the surface states are topologically trivial. Our results demonstrate that interfacial bonds prevent the semimetal-to-semiconductor transition predicted for freestanding bismuth layers, highlighting the importance of controlled functionalization and surface passivation in two-dimensional materials. |
| title | Inversion Symmetry Breaking in Epitaxial Ultrathin Bi (111) Films |
| topic | Materials Science |
| url | https://arxiv.org/abs/2302.00803 |