Dimer Coupling Energies of the Si(001) Surface
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arXiv
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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
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2023
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| _version_ | 1866917955162341376 |
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| author | Brand, Christian Hucht, Alfred Jnawali, Giriraj Fortmann, Jonas D. Sothmann, Björn Mehdipour, Hamid Kratzer, Peter Schützhold, Ralf Hoegen, Michael Horn-von |
| author_facet | Brand, Christian Hucht, Alfred Jnawali, Giriraj Fortmann, Jonas D. Sothmann, Björn Mehdipour, Hamid Kratzer, Peter Schützhold, Ralf Hoegen, Michael Horn-von |
| contents | The coupling energies between the buckled dimers of the Si(001) surface were determined through analysis of the anisotropic critical behavior of its order-disorder phase transition. Spot profiles in high-resolution low-energy electron diffraction as a function of temperature were analyzed within the framework of the anisotropic two-dimensional Ising model. The validity of this approach is justified by the large ratio of correlation lengths, $ξ_\parallel^+/ξ_\perp^+ = 5.2$ of the fluctuating $c(4 {\times} 2)$ domains above the critical temperature $T_\mathrm{c} = (190.6 \pm 10)$ K. We obtain effective couplings $J_\parallel = (-24.9 \pm 1.3)$ meV along the dimer rows and $J_\perp = (-0.8 \pm 0.1)$ meV across the dimer rows, i.e., antiferromagnetic-like coupling of the dimers with $c(4 {\times} 2)$ symmetry. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2302_01715 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Dimer Coupling Energies of the Si(001) Surface Brand, Christian Hucht, Alfred Jnawali, Giriraj Fortmann, Jonas D. Sothmann, Björn Mehdipour, Hamid Kratzer, Peter Schützhold, Ralf Hoegen, Michael Horn-von Mesoscale and Nanoscale Physics The coupling energies between the buckled dimers of the Si(001) surface were determined through analysis of the anisotropic critical behavior of its order-disorder phase transition. Spot profiles in high-resolution low-energy electron diffraction as a function of temperature were analyzed within the framework of the anisotropic two-dimensional Ising model. The validity of this approach is justified by the large ratio of correlation lengths, $ξ_\parallel^+/ξ_\perp^+ = 5.2$ of the fluctuating $c(4 {\times} 2)$ domains above the critical temperature $T_\mathrm{c} = (190.6 \pm 10)$ K. We obtain effective couplings $J_\parallel = (-24.9 \pm 1.3)$ meV along the dimer rows and $J_\perp = (-0.8 \pm 0.1)$ meV across the dimer rows, i.e., antiferromagnetic-like coupling of the dimers with $c(4 {\times} 2)$ symmetry. |
| title | Dimer Coupling Energies of the Si(001) Surface |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2302.01715 |