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Main Authors: Ji, Yanxin, Cortese, Alejandro J., Smart, Conrad L., Molnar, Alyosha C., McEuen, Paul L.
Format: Preprint
Published: 2023
Subjects:
Online Access:https://arxiv.org/abs/2302.05801
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_version_ 1866909058912485376
author Ji, Yanxin
Cortese, Alejandro J.
Smart, Conrad L.
Molnar, Alyosha C.
McEuen, Paul L.
author_facet Ji, Yanxin
Cortese, Alejandro J.
Smart, Conrad L.
Molnar, Alyosha C.
McEuen, Paul L.
contents We present a general transfer method for the heterogeneous integration of different photonic and electronic materials systems and devices onto a single substrate. Called BLAST, for Bond, Lift, Align, and Slide Transfer, the process works at wafer scale and offers precision alignment, high yield, varying topographies, and suitability for subsequent lithographic processing. We demonstrate BLAST's capabilities by integrating both GaAs and GaN microLEDs with silicon photovoltaics to fabricate optical wireless integrated circuits that up-convert photons from the red to the blue. We also show that BLAST can be applied to a variety of other devices and substrates, including CMOS electronics, vertical cavity surface emitting lasers (VCSELs), and 2D materials. BLAST further enables the modularization of optoelectronic microsystems, where optical devices fabricated on one material substrate can be lithographically integrated with electronic devices on a different substrate in a scalable process.
format Preprint
id arxiv_https___arxiv_org_abs_2302_05801
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle BLAST: A Wafer-scale Transfer Process for Heterogeneous Integration of Optics and Electronics
Ji, Yanxin
Cortese, Alejandro J.
Smart, Conrad L.
Molnar, Alyosha C.
McEuen, Paul L.
Applied Physics
We present a general transfer method for the heterogeneous integration of different photonic and electronic materials systems and devices onto a single substrate. Called BLAST, for Bond, Lift, Align, and Slide Transfer, the process works at wafer scale and offers precision alignment, high yield, varying topographies, and suitability for subsequent lithographic processing. We demonstrate BLAST's capabilities by integrating both GaAs and GaN microLEDs with silicon photovoltaics to fabricate optical wireless integrated circuits that up-convert photons from the red to the blue. We also show that BLAST can be applied to a variety of other devices and substrates, including CMOS electronics, vertical cavity surface emitting lasers (VCSELs), and 2D materials. BLAST further enables the modularization of optoelectronic microsystems, where optical devices fabricated on one material substrate can be lithographically integrated with electronic devices on a different substrate in a scalable process.
title BLAST: A Wafer-scale Transfer Process for Heterogeneous Integration of Optics and Electronics
topic Applied Physics
url https://arxiv.org/abs/2302.05801