All-Electrical Skyrmionic Bits in a Chiral Magnetic Tunnel Junction

Fuente: arXiv
Saved in:
Bibliographic Details
Main Authors: Chen, Shaohai, Ho, Pin, Lourembam, James, Toh, Alexander K. J., Huang, Jifei, Chen, Xiaoye, Tan, Hang Khume, Yap, Sherry K. L., Lim, Royston J. J., Tan, Hui Ru, Suraj, T. S., Toh, Yeow Teck, Lim, Idayu, Zhou, Jing, Chung, Hong Jing, Ter Lim, Sze, Soumyanarayanan, Anjan
Format: Preprint
Published: 2023
Subjects:
Online Access:
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1866916249783500800
author Chen, Shaohai
Ho, Pin
Lourembam, James
Toh, Alexander K. J.
Huang, Jifei
Chen, Xiaoye
Tan, Hang Khume
Yap, Sherry K. L.
Lim, Royston J. J.
Tan, Hui Ru
Suraj, T. S.
Toh, Yeow Teck
Lim, Idayu
Zhou, Jing
Chung, Hong Jing
Ter Lim, Sze
Soumyanarayanan, Anjan
author_facet Chen, Shaohai
Ho, Pin
Lourembam, James
Toh, Alexander K. J.
Huang, Jifei
Chen, Xiaoye
Tan, Hang Khume
Yap, Sherry K. L.
Lim, Royston J. J.
Tan, Hui Ru
Suraj, T. S.
Toh, Yeow Teck
Lim, Idayu
Zhou, Jing
Chung, Hong Jing
Ter Lim, Sze
Soumyanarayanan, Anjan
contents Topological spin textures such as magnetic skyrmions hold considerable promise as robust, nanometre-scale, mobile bits for sustainable computing. A longstanding roadblock to unleashing their potential is the absence of a device enabling deterministic electrical readout of individual spin textures. Here we present the wafer-scale realization of a nanoscale chiral magnetic tunnel junction (MTJ) hosting a single, ambient skyrmion. Using a suite of electrical and multi-modal imaging techniques, we show that the MTJ nucleates skyrmions of fixed polarity, whose large readout signal - 20-70% relative to uniform states - corresponds directly to skyrmion size. Further, the MTJ exploits complementary mechanisms to stabilize distinctly sized skyrmions at zero field, thereby realizing three nonvolatile electrical states. Crucially, it can write and delete skyrmions using current densities 1,000 times lower than state-of-the-art. These results provide a platform to incorporate readout and manipulation of skyrmionic bits across myriad device architectures, and a springboard to harness chiral spin textures for multi-bit memory and unconventional computing.
format Preprint
id arxiv_https___arxiv_org_abs_2302_08020
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle All-Electrical Skyrmionic Bits in a Chiral Magnetic Tunnel Junction
Chen, Shaohai
Ho, Pin
Lourembam, James
Toh, Alexander K. J.
Huang, Jifei
Chen, Xiaoye
Tan, Hang Khume
Yap, Sherry K. L.
Lim, Royston J. J.
Tan, Hui Ru
Suraj, T. S.
Toh, Yeow Teck
Lim, Idayu
Zhou, Jing
Chung, Hong Jing
Ter Lim, Sze
Soumyanarayanan, Anjan
Mesoscale and Nanoscale Physics
Materials Science
Topological spin textures such as magnetic skyrmions hold considerable promise as robust, nanometre-scale, mobile bits for sustainable computing. A longstanding roadblock to unleashing their potential is the absence of a device enabling deterministic electrical readout of individual spin textures. Here we present the wafer-scale realization of a nanoscale chiral magnetic tunnel junction (MTJ) hosting a single, ambient skyrmion. Using a suite of electrical and multi-modal imaging techniques, we show that the MTJ nucleates skyrmions of fixed polarity, whose large readout signal - 20-70% relative to uniform states - corresponds directly to skyrmion size. Further, the MTJ exploits complementary mechanisms to stabilize distinctly sized skyrmions at zero field, thereby realizing three nonvolatile electrical states. Crucially, it can write and delete skyrmions using current densities 1,000 times lower than state-of-the-art. These results provide a platform to incorporate readout and manipulation of skyrmionic bits across myriad device architectures, and a springboard to harness chiral spin textures for multi-bit memory and unconventional computing.
title All-Electrical Skyrmionic Bits in a Chiral Magnetic Tunnel Junction
topic Mesoscale and Nanoscale Physics
Materials Science
url https://arxiv.org/abs/2302.08020