Fractional Marcus-Hush-Chidsey-Yakopcic current-voltage model for redox-based resistive memory devices
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arXiv
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| Main Authors: | , , , , |
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| Format: | Preprint |
| Published: |
2023
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| _version_ | 1866916110578745344 |
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| author | Paradezhenko, Georgii Prodan, Dmitrii Pervishko, Anastasiia Yudin, Dmitry Allagui, Anis |
| author_facet | Paradezhenko, Georgii Prodan, Dmitrii Pervishko, Anastasiia Yudin, Dmitry Allagui, Anis |
| contents | We propose a circuit-level model combining the Marcus-Hush-Chidsey electron current equation and the Yakopcic equation for the state variable for describing resistive switching memory devices of the structure metal-ionic conductor-metal. We extend the dynamics of the state variable originally described by a first-order time derivative by introducing a fractional derivative with an arbitrary order between zero and one. We show that the extended model fits with great fidelity the current-voltage characteristic data obtained on a Si electrochemical metallization memory device with Ag-Cu alloy. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2302_09407 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Fractional Marcus-Hush-Chidsey-Yakopcic current-voltage model for redox-based resistive memory devices Paradezhenko, Georgii Prodan, Dmitrii Pervishko, Anastasiia Yudin, Dmitry Allagui, Anis Materials Science Applied Physics We propose a circuit-level model combining the Marcus-Hush-Chidsey electron current equation and the Yakopcic equation for the state variable for describing resistive switching memory devices of the structure metal-ionic conductor-metal. We extend the dynamics of the state variable originally described by a first-order time derivative by introducing a fractional derivative with an arbitrary order between zero and one. We show that the extended model fits with great fidelity the current-voltage characteristic data obtained on a Si electrochemical metallization memory device with Ag-Cu alloy. |
| title | Fractional Marcus-Hush-Chidsey-Yakopcic current-voltage model for redox-based resistive memory devices |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2302.09407 |