Hybrid integrated near UV lasers using the deep-UV Al2O3 platform

Fuente: arXiv
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Main Authors: Franken, C. A. A., Hendriks, W. A. P. M., Winkler, L. V., Dijkstra, M., Nascimento Jr, A. R. do, van Rees, A., Mardani, M. R. S., Dekker, R., van Kerkhof, J., van der Slot, P. J. M., García-Blanco, S. M., Boller, K. -J.
Format: Preprint
Published: 2023
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author Franken, C. A. A.
Hendriks, W. A. P. M.
Winkler, L. V.
Dijkstra, M.
Nascimento Jr, A. R. do
van Rees, A.
Mardani, M. R. S.
Dekker, R.
van Kerkhof, J.
van der Slot, P. J. M.
García-Blanco, S. M.
Boller, K. -J.
author_facet Franken, C. A. A.
Hendriks, W. A. P. M.
Winkler, L. V.
Dijkstra, M.
Nascimento Jr, A. R. do
van Rees, A.
Mardani, M. R. S.
Dekker, R.
van Kerkhof, J.
van der Slot, P. J. M.
García-Blanco, S. M.
Boller, K. -J.
contents Hybrid integrated diode lasers have so far been realized using silicon, polymer, and silicon nitride (Si3N4) waveguide platforms for extending on-chip tunable light engines from the infrared throughout the visible range. Here we demonstrate the first hybrid integrated laser using the aluminum oxide (Al2O3) deep-UV capable waveguide platform. By permanently coupling low-loss Al2O3 frequency-tunable Vernier feedback circuits with GaN double-pass amplifiers in a hermetically sealed housing, we demonstrate the first extended cavity diode laser (ECDL) in the near UV. The laser shows a maximum fiber-coupled output power of 0.74 mW, corresponding to about 3.5 mW on chip, and tunes more than 4.4 nm in wavelength from 408.1 nm to 403.7 nm. Integrating stable, single-mode and tunable lasers into a deep-UV platform opens a new path for chip-integrated photonic applications.
format Preprint
id arxiv_https___arxiv_org_abs_2302_11492
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Hybrid integrated near UV lasers using the deep-UV Al2O3 platform
Franken, C. A. A.
Hendriks, W. A. P. M.
Winkler, L. V.
Dijkstra, M.
Nascimento Jr, A. R. do
van Rees, A.
Mardani, M. R. S.
Dekker, R.
van Kerkhof, J.
van der Slot, P. J. M.
García-Blanco, S. M.
Boller, K. -J.
Optics
Applied Physics
Hybrid integrated diode lasers have so far been realized using silicon, polymer, and silicon nitride (Si3N4) waveguide platforms for extending on-chip tunable light engines from the infrared throughout the visible range. Here we demonstrate the first hybrid integrated laser using the aluminum oxide (Al2O3) deep-UV capable waveguide platform. By permanently coupling low-loss Al2O3 frequency-tunable Vernier feedback circuits with GaN double-pass amplifiers in a hermetically sealed housing, we demonstrate the first extended cavity diode laser (ECDL) in the near UV. The laser shows a maximum fiber-coupled output power of 0.74 mW, corresponding to about 3.5 mW on chip, and tunes more than 4.4 nm in wavelength from 408.1 nm to 403.7 nm. Integrating stable, single-mode and tunable lasers into a deep-UV platform opens a new path for chip-integrated photonic applications.
title Hybrid integrated near UV lasers using the deep-UV Al2O3 platform
topic Optics
Applied Physics
url https://arxiv.org/abs/2302.11492