Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices
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arXiv
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| Natura: | Preprint |
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2023
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| author | Vaz, Diogo C. Lin, Chia-Ching Plombon, John J. Choi, Won Young Groen, Inge Arango, Isabel C. Chuvilin, Andrey Hueso, Luis E. Nikonov, Dmitri E. Li, Hai Debashis, Punyashloka Clendenning, Scott B. Gosavi, Tanay A. Huang, Yen-Lin Prasad, Bhagwati Ramesh, Ramamoorthy Vecchiola, Aymeric Bibes, Manuel Bouzehouane, Karim Fusil, Stephane Garcia, Vincent Young, Ian A. Casanova, Fèlix |
| author_facet | Vaz, Diogo C. Lin, Chia-Ching Plombon, John J. Choi, Won Young Groen, Inge Arango, Isabel C. Chuvilin, Andrey Hueso, Luis E. Nikonov, Dmitri E. Li, Hai Debashis, Punyashloka Clendenning, Scott B. Gosavi, Tanay A. Huang, Yen-Lin Prasad, Bhagwati Ramesh, Ramamoorthy Vecchiola, Aymeric Bibes, Manuel Bouzehouane, Karim Fusil, Stephane Garcia, Vincent Young, Ian A. Casanova, Fèlix |
| contents | As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potential, at the cost of significantly high switching energies. Alternatively, magnetoelectric materials are predicted to enable low-power magnetization control, a solution with limited device-level results. Here, we demonstrate voltage-based magnetization switching and reading in nanodevices at room temperature, enabled by exchange coupling between multiferroic BiFeO$_3$ and ferromagnetic CoFe, for writing, and spin-to-charge current conversion between CoFe and Pt, for reading. We show that upon the electrical switching of the BiFeO$_3$, the magnetization of the CoFe can be reversed, giving rise to different voltage outputs. Through additional microscopy techniques, magnetization reversal is linked with the polarization state and antiferromagnetic cycloid propagation direction in the BiFeO$_3$. This study constitutes the building block for magnetoelectric spin-orbit logic, opening a new avenue for low-power beyond-CMOS technologies. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2302_12162 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices Vaz, Diogo C. Lin, Chia-Ching Plombon, John J. Choi, Won Young Groen, Inge Arango, Isabel C. Chuvilin, Andrey Hueso, Luis E. Nikonov, Dmitri E. Li, Hai Debashis, Punyashloka Clendenning, Scott B. Gosavi, Tanay A. Huang, Yen-Lin Prasad, Bhagwati Ramesh, Ramamoorthy Vecchiola, Aymeric Bibes, Manuel Bouzehouane, Karim Fusil, Stephane Garcia, Vincent Young, Ian A. Casanova, Fèlix Mesoscale and Nanoscale Physics As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potential, at the cost of significantly high switching energies. Alternatively, magnetoelectric materials are predicted to enable low-power magnetization control, a solution with limited device-level results. Here, we demonstrate voltage-based magnetization switching and reading in nanodevices at room temperature, enabled by exchange coupling between multiferroic BiFeO$_3$ and ferromagnetic CoFe, for writing, and spin-to-charge current conversion between CoFe and Pt, for reading. We show that upon the electrical switching of the BiFeO$_3$, the magnetization of the CoFe can be reversed, giving rise to different voltage outputs. Through additional microscopy techniques, magnetization reversal is linked with the polarization state and antiferromagnetic cycloid propagation direction in the BiFeO$_3$. This study constitutes the building block for magnetoelectric spin-orbit logic, opening a new avenue for low-power beyond-CMOS technologies. |
| title | Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2302.12162 |