Cita APA (7a ed.)

Zhang, T., Lindemann, T., Gardner, G. C., Gronin, S., Wu, T., & Manfra, M. J. (2023). Mobility exceeding 100,000 cm$^2$/Vs in modulation-doped shallow InAs quantum wells coupled to epitaxial aluminum.

Cita Chicago Style (17a ed.)

Zhang, Teng, Tyler Lindemann, Geoffrey C. Gardner, Sergei Gronin, Tailung Wu, y Michael J. Manfra. Mobility Exceeding 100,000 Cm$^2$/Vs in Modulation-doped Shallow InAs Quantum Wells Coupled to Epitaxial Aluminum. 2023.

Cita MLA (9a ed.)

Zhang, Teng, et al. Mobility Exceeding 100,000 Cm$^2$/Vs in Modulation-doped Shallow InAs Quantum Wells Coupled to Epitaxial Aluminum. 2023.