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Mobility exceeding 100,000 cm$^2$/Vs in modulation-doped shallow InAs quantum wells coupled to epitaxial aluminum

Fuente: arXiv

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Detalles Bibliográficos
Autores principales:	Zhang, Teng, Lindemann, Tyler, Gardner, Geoffrey C., Gronin, Sergei, Wu, Tailung, Manfra, Michael J.
Formato:	Preprint
Publicado:	2023
Materias:	Mesoscale and Nanoscale Physics
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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