Gespeichert in:
| Hauptverfasser: | , , , , , , , , , , |
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| Format: | Preprint |
| Veröffentlicht: |
2023
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| Schlagworte: | |
| Online-Zugang: | https://arxiv.org/abs/2302.13305 |
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Inhaltsangabe:
- By harvesting a wider range of the solar spectrum, intermediate band solar cells (IBSCs) can achieve efficiencies 50% higher than conventional single-junction solar cells. For this, additional requirements are imposed to the light-absorbing semiconductor, which must contain a collection of in-gap levels, called intermediate band (IB), optically coupled to but thermally decoupled from the valence and conduction bands (VB and CB). Quantum-dot-in-perovskite (QDiP) solids, where inorganic quantum dots (QDs) are embedded in a halide perovskite matrix, have been recently suggested as a promising material platform for developing IBSCs. In this work, QDiP solids with excellent morphological and structural quality and strong absorption and emission related to the presence of in-gap QD levels are synthesized. With them, QDiP-based IBSCs are fabricated and, by means of temperature-dependent photocurrent measurements, it is shown that the IB is strongly thermally decoupled from the valence and conduction bands. The activation energy of the IB$\rightarrow$CB thermal escape of electrons is measured to be 204 meV, resulting in the mitigation of this detrimental process even under room-temperature operation, thus fulfilling the first mandatory requisite to enable high-efficiency IBSCs.