Gate control of superconducting current: Mechanisms, parameters and technological potential
Fuente:
arXiv
Salvato in:
| Autori principali: | , , , , , , , , , , , , , , , , |
|---|---|
| Natura: | Preprint |
| Pubblicazione: |
2023
|
| Soggetti: | |
| Accesso online: | |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
| _version_ | 1866912121087852544 |
|---|---|
| author | Ruf, Leon Puglia, Claudio Elalaily, Tosson De Simoni, Giorgio Joint, Francois Berke, Martin Koch, Jennifer Iorio, Andrea Khorshidian, Sara Makk, Peter Gasparinetti, Simone Csonka, Szabolcs Belzig, Wolfgang Cuoco, Mario Giazotto, Francesco Scheer, Elke Di Bernardo, Angelo |
| author_facet | Ruf, Leon Puglia, Claudio Elalaily, Tosson De Simoni, Giorgio Joint, Francois Berke, Martin Koch, Jennifer Iorio, Andrea Khorshidian, Sara Makk, Peter Gasparinetti, Simone Csonka, Szabolcs Belzig, Wolfgang Cuoco, Mario Giazotto, Francesco Scheer, Elke Di Bernardo, Angelo |
| contents | In conventional metal-oxide semiconductor (CMOS) electronics, the logic state of a device is set by a gate voltage (VG). The superconducting equivalent of such effect had remained unknown until it was recently shown that a VG can tune the superconducting current (supercurrent) flowing through a nanoconstriction in a superconductor. This gate-controlled supercurrent (GCS) effect can lead to superconducting logics like CMOS logics, but with lower energy dissipation. The physical mechanism underlying the GCS effect, however, remains under debate. In this review article, we illustrate the main mechanisms proposed for the GCS effect, and the material and device parameters that mostly affect it based on the evidence reported. We will come to the conclusion that different mechanisms are at play in the different studies reported so far. We then outline studies that can help answer open questions on the effect and achieve control over it, which is key for applications. We finally give insights into the impact that the GCS effect can have towards high-performance computing with low-energy dissipation and quantum technologies. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2302_13734 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Gate control of superconducting current: Mechanisms, parameters and technological potential Ruf, Leon Puglia, Claudio Elalaily, Tosson De Simoni, Giorgio Joint, Francois Berke, Martin Koch, Jennifer Iorio, Andrea Khorshidian, Sara Makk, Peter Gasparinetti, Simone Csonka, Szabolcs Belzig, Wolfgang Cuoco, Mario Giazotto, Francesco Scheer, Elke Di Bernardo, Angelo Superconductivity Mesoscale and Nanoscale Physics Materials Science In conventional metal-oxide semiconductor (CMOS) electronics, the logic state of a device is set by a gate voltage (VG). The superconducting equivalent of such effect had remained unknown until it was recently shown that a VG can tune the superconducting current (supercurrent) flowing through a nanoconstriction in a superconductor. This gate-controlled supercurrent (GCS) effect can lead to superconducting logics like CMOS logics, but with lower energy dissipation. The physical mechanism underlying the GCS effect, however, remains under debate. In this review article, we illustrate the main mechanisms proposed for the GCS effect, and the material and device parameters that mostly affect it based on the evidence reported. We will come to the conclusion that different mechanisms are at play in the different studies reported so far. We then outline studies that can help answer open questions on the effect and achieve control over it, which is key for applications. We finally give insights into the impact that the GCS effect can have towards high-performance computing with low-energy dissipation and quantum technologies. |
| title | Gate control of superconducting current: Mechanisms, parameters and technological potential |
| topic | Superconductivity Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2302.13734 |