Imaging the Quantum Capacitance of Strained MoS2 Monolayers by Electrostatic Force Microscopy

Fuente: arXiv
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Main Authors: Di Giorgio, Cinzia, Blundo, Elena, Basset, Julien, Pettinari, Giorgio, Felici, Marco, Quay, Charis H. L., Rohart, Stanislas, Polimeni, Antonio, Bobba, Fabrizio, Aprili, Marco
Format: Preprint
Published: 2023
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author Di Giorgio, Cinzia
Blundo, Elena
Basset, Julien
Pettinari, Giorgio
Felici, Marco
Quay, Charis H. L.
Rohart, Stanislas
Polimeni, Antonio
Bobba, Fabrizio
Aprili, Marco
author_facet Di Giorgio, Cinzia
Blundo, Elena
Basset, Julien
Pettinari, Giorgio
Felici, Marco
Quay, Charis H. L.
Rohart, Stanislas
Polimeni, Antonio
Bobba, Fabrizio
Aprili, Marco
contents We implemented radio frequency-assisted electrostatic force microscopy (RF-EFM) to investigate the electric field response of biaxially strained molybdenum disulfide (MoS2) monolayers (MLs) in the form of mesoscopic bubbles, produced via hydrogen (H)-ion irradiation of the bulk crystal. MoS2 ML, a semiconducting transition metal dichalcogenide, has recently attracted significant attention due to its promising optoelectronic properties, further tunable by strain. Here, we take advantage of the RF excitation to distinguish the intrinsic quantum capacitance of the strained ML from that due to atomic scale defects, presumably sulfur vacancies or H-passivated sulfur vacancies. In fact, at frequencies fRF larger than the inverse defect trapping time, the defect contribution to the total capacitance and to transport is negligible. Using RF-EFM at fRF = 300 MHz, we visualize simultaneously the bubble topography and its quantum capacitance. Our finite-frequency capacitance imaging technique is non-invasive and nanoscale, and can contribute to the investigation of time and spatial-dependent phenomena, such as the electron compressibility in quantum materials, which are difficult to measure by other methods.
format Preprint
id arxiv_https___arxiv_org_abs_2302_14584
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Imaging the Quantum Capacitance of Strained MoS2 Monolayers by Electrostatic Force Microscopy
Di Giorgio, Cinzia
Blundo, Elena
Basset, Julien
Pettinari, Giorgio
Felici, Marco
Quay, Charis H. L.
Rohart, Stanislas
Polimeni, Antonio
Bobba, Fabrizio
Aprili, Marco
Mesoscale and Nanoscale Physics
Materials Science
We implemented radio frequency-assisted electrostatic force microscopy (RF-EFM) to investigate the electric field response of biaxially strained molybdenum disulfide (MoS2) monolayers (MLs) in the form of mesoscopic bubbles, produced via hydrogen (H)-ion irradiation of the bulk crystal. MoS2 ML, a semiconducting transition metal dichalcogenide, has recently attracted significant attention due to its promising optoelectronic properties, further tunable by strain. Here, we take advantage of the RF excitation to distinguish the intrinsic quantum capacitance of the strained ML from that due to atomic scale defects, presumably sulfur vacancies or H-passivated sulfur vacancies. In fact, at frequencies fRF larger than the inverse defect trapping time, the defect contribution to the total capacitance and to transport is negligible. Using RF-EFM at fRF = 300 MHz, we visualize simultaneously the bubble topography and its quantum capacitance. Our finite-frequency capacitance imaging technique is non-invasive and nanoscale, and can contribute to the investigation of time and spatial-dependent phenomena, such as the electron compressibility in quantum materials, which are difficult to measure by other methods.
title Imaging the Quantum Capacitance of Strained MoS2 Monolayers by Electrostatic Force Microscopy
topic Mesoscale and Nanoscale Physics
Materials Science
url https://arxiv.org/abs/2302.14584