Graphene-Quantum Dot Hybrid Photodetectors from 200 mm Wafer Scale Processing
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arXiv
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2023
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| author | Li, Sha Wang, Zhenxing Robertz, Bianca Neumaier, Daniel Txoperena, Oihana Maestre, Arantxa Zurutuza, Amaia Bower, Chris Rushton, Ashley Liu, Yinglin Harris, Chris Bessonov, Alexander Malik, Surama Allen, Mark Medina-Salazar, Ivonne Ryhänen, Tapani Lemme, Max C. |
| author_facet | Li, Sha Wang, Zhenxing Robertz, Bianca Neumaier, Daniel Txoperena, Oihana Maestre, Arantxa Zurutuza, Amaia Bower, Chris Rushton, Ashley Liu, Yinglin Harris, Chris Bessonov, Alexander Malik, Surama Allen, Mark Medina-Salazar, Ivonne Ryhänen, Tapani Lemme, Max C. |
| contents | A 200 mm processing platform for the large-scale production of graphene field-effect transistor-quantum dot (GFET-QD) hybrid photodetectors is demonstrated. Comprehensive statistical analysis of electric data shows a high yield (96%) and low variation of the 200 mm scale fabrication. The GFET-QD devices deliver responsivities of 10${^5}$ - 10${^6}$ V/W in a wavelength range from 400 to 1800 nm, at up to 100 frames per second. Spectral sensitivity compares well to that obtained using similar GFET-QD photodetectors. The device concept enables gate-tunable suppression or enhancement of the photovoltage, which may be exploited for electric shutter operation by toggling between the signal capture and shutter states. The devices show good stability at a wide operation range and external quantum efficiency of 20% in the short-wavelength infrared range. Furthermore, an integration solution with complementary metal-oxide-semiconductor technology is presented to realize image-sensor-array chips and a proof-of-concept image system. This work demonstrates the potential for the volume manufacture of infrared photodetectors for a wide range of imaging applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2303_00406 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Graphene-Quantum Dot Hybrid Photodetectors from 200 mm Wafer Scale Processing Li, Sha Wang, Zhenxing Robertz, Bianca Neumaier, Daniel Txoperena, Oihana Maestre, Arantxa Zurutuza, Amaia Bower, Chris Rushton, Ashley Liu, Yinglin Harris, Chris Bessonov, Alexander Malik, Surama Allen, Mark Medina-Salazar, Ivonne Ryhänen, Tapani Lemme, Max C. Mesoscale and Nanoscale Physics Applied Physics A 200 mm processing platform for the large-scale production of graphene field-effect transistor-quantum dot (GFET-QD) hybrid photodetectors is demonstrated. Comprehensive statistical analysis of electric data shows a high yield (96%) and low variation of the 200 mm scale fabrication. The GFET-QD devices deliver responsivities of 10${^5}$ - 10${^6}$ V/W in a wavelength range from 400 to 1800 nm, at up to 100 frames per second. Spectral sensitivity compares well to that obtained using similar GFET-QD photodetectors. The device concept enables gate-tunable suppression or enhancement of the photovoltage, which may be exploited for electric shutter operation by toggling between the signal capture and shutter states. The devices show good stability at a wide operation range and external quantum efficiency of 20% in the short-wavelength infrared range. Furthermore, an integration solution with complementary metal-oxide-semiconductor technology is presented to realize image-sensor-array chips and a proof-of-concept image system. This work demonstrates the potential for the volume manufacture of infrared photodetectors for a wide range of imaging applications. |
| title | Graphene-Quantum Dot Hybrid Photodetectors from 200 mm Wafer Scale Processing |
| topic | Mesoscale and Nanoscale Physics Applied Physics |
| url | https://arxiv.org/abs/2303.00406 |