Imagen de Portada

Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells

Fuente: arXiv

Guardado en:

Detalles Bibliográficos
Autores principales:	Losert, Merritt P., Eriksson, M. A., Joynt, Robert, Rahman, Rajib, Scappucci, Giordano, Coppersmith, Susan N., Friesen, Mark
Formato:	Preprint
Publicado:	2023
Materias:	Mesoscale and Nanoscale Physics
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

Ejemplares similares

Using a spin-triplet encoding to enhance shuttling fidelities in Si/SiGe quantum wells
por: Losert, Merritt P. R., et al.
Publicado: (2026)

g-factor theory of Si/SiGe quantum dots: spin-valley and giant renormalization effects
por: Woods, Benjamin D., et al.
Publicado: (2024)

Statistical characterization of valley coupling in Si/SiGe quantum dots via $g$-factor measurements near a valley vortex
por: Woods, Benjamin D., et al.
Publicado: (2025)

The effects of alloy disorder on strongly-driven flopping mode qubits in Si/SiGe
por: Losert, Merritt P. R., et al.
Publicado: (2025)

Strategies for enhancing spin-shuttling fidelities in Si/SiGe quantum wells with random-alloy disorder
por: Losert, Merritt P., et al.
Publicado: (2024)

Engineering Ge profiles in Si/SiGe heterostructures for increased valley splitting
por: Stehouwer, Lucas E. A., et al.
Publicado: (2025)

Omnidirectional shuttling to avoid valley excitations in Si/SiGe quantum wells
por: Németh, Róbert, et al.
Publicado: (2024)

High-fidelity EDSR in Si/SiGe Wiggle Wells
por: Soomro, Hudaiba, et al.
Publicado: (2026)

Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations
por: Woods, Benjamin D., et al.
Publicado: (2023)

On-chip cryogenic multiplexing of Si/SiGe quantum devices
por: Wolfe, M. A., et al.
Publicado: (2024)

Individually tunable Si/SiGe quantum dot operating voltages via gate-biased illumination
por: Benson, Jared, et al.
Publicado: (2026)

Suppressing Si Valley Excitation and Valley-Induced Spin Dephasing for Long-Distance Shuttling
por: Oda, Yasuo, et al.
Publicado: (2024)

Reducing disorder in Ge quantum wells by using thick SiGe barriers
por: Costa, Davide, et al.
Publicado: (2024)

Optically programmable and erasable cryogenic flash memory on an undoped Si/SiGe heterostructure
por: Rastogi, S, et al.
Publicado: (2026)

Towards Utilizing Scanning Gate Microscopy as a High-Resolution Probe of Valley Splitting in Si/SiGe Heterostructures
por: Cakar, Efe, et al.
Publicado: (2024)

Control of threshold voltages in Si/SiGe quantum devices via optical illumination
por: Wolfe, M. A., et al.
Publicado: (2023)

Valley Splitting Correlations Across a Silicon Quantum Well Containing Germanium
por: Marcks, Jonathan C., et al.
Publicado: (2025)

Optimization of Si/SiGe Heterostructures for Large and Robust Valley Splitting in Silicon Qubits
por: Thayil, Abel, et al.
Publicado: (2025)

Active Noise Reduction in Si/SiGe Gated Quantum Dots
por: Bharadwaj, Rajat, et al.
Publicado: (2025)

Exact Multi-Valley Envelope Function Theory of Valley Splitting in Si/SiGe Nanostructures
por: Ermoneit, Lasse, et al.
Publicado: (2026)

Quantum confinement in semiconductor random alloys: a case study on Si/SiGe/Si
por: Dick, Daniel, et al.
Publicado: (2026)

Statistical Structure of Charge Disorder in Si/SiGe Quantum Dots
por: Samadi, Saeed, et al.
Publicado: (2025)

g-tensor Optimization in Ge/SiGe Quantum Dots
por: Shojaei, Aram, et al.
Publicado: (2026)

Theory of Valley Splitting in Si/SiGe Spin-Qubits: Interplay of Strain, Resonances and Random Alloy Disorder
por: Thayil, Abel, et al.
Publicado: (2024)

Electrical Characterization of hexagonal SiGe
por: Bollier, Isabelle, et al.
Publicado: (2025)

Bayesian and geometric analyses of power spectral densities of spin qubits in Si/SiGe quantum dot devices
por: Choi, Yujun, et al.
Publicado: (2025)

High Mobility SiGe/Ge 2DHG Heterostructure Quantum Wells for Semiconductor Hole Spin Qubits
por: Kong, Zhenzhen, et al.
Publicado: (2024)

Increasing valley splitting in Si/SiGe by practically achievable heterostructure profiles
por: Cvitkovich, Lukas, et al.
Publicado: (2026)

Density-driven scattering and valley splitting in undoped Si/SiGe two-dimensional electron system
por: Kynshi, Lucky Donald Lyngdoh, et al.
Publicado: (2025)

Fabrication, characterization and mechanical loading of Si/SiGe membranes for spin qubit devices
por: Marcogliese, Lucas, et al.
Publicado: (2025)

Characterization of individual charge fluctuators in Si/SiGe quantum dots
por: Ye, Feiyang, et al.
Publicado: (2024)

Anisotropic spin-valley coupling in SiMOS and Si/SiGe quantum dots
por: Jacobson, N. Tobias, et al.
Publicado: (2026)

Correlations of spin splitting and orbital fluctuations due to 1/f charge noise in the Si/SiGe Quantum Dot
por: Kępa, Marcin, et al.
Publicado: (2023)

Pursuing high-fidelity control of spin qubits in natural Si/SiGe quantum dot
por: Wang, Ning, et al.
Publicado: (2024)

Valley physics in the two bands $\mathbf{k}\cdot\mathbf{p}$ model for SiGe heterostructures and spin qubits
por: Salamone, Tancredi, et al.
Publicado: (2025)

Cryogenic interface-state filling and tunneling mechanisms in strained Ge/SiGe heterostructures
por: Ma, Jingrui, et al.
Publicado: (2026)

Conveyor-mode electron shuttling through a T-junction in Si/SiGe
por: Beer, Max, et al.
Publicado: (2026)

Stabilizing an individual charge fluctuator in a Si/SiGe quantum dot
por: Ye, Feiyang, et al.
Publicado: (2024)

Lifting of Spin Blockade by Charged Impurities in Si-MOS Double Quantum Dot Devices
por: King, Evelyn, et al.
Publicado: (2018)

Low-Noise Quantum Dots in Ultra-Shallow Ge/SiGe Heterostructures for Prototyping Hybrid Semiconducting-Superconducting Devices
por: Borovkov, M., et al.
Publicado: (2026)