Blocking transition of interface traps in MoS$_2$-on-SiO$_2$ FETs
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arXiv
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| Format: | Preprint |
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2023
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| _version_ | 1866917561639108608 |
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| author | Jana, Santu Prasad Gupta, Suraina Gupta, Anjan K. |
| author_facet | Jana, Santu Prasad Gupta, Suraina Gupta, Anjan K. |
| contents | Electrical conductivity with gate-sweep in a few layer MoS$_2$-on-SiO$_2$ field-effect-transistor shows an abrupt reduction in hysteresis when cooled. The hysteresis and time dependent conductivity of the MoS$_2$ channel are modeled using the dynamics of interface traps' occupancy. The reduction in hysteresis is found to be steepest at a blocking temperature near 225 K. This is attributed to the interplay between thermal and barrier energies and fitted using a distribution of the latter. Further, the charge stored in the blocked traps is programmed at low temperatures by cooling under suitable gate voltage. Thus the threshold gate-voltage in nearly non-hysteretic devices at 80 K temperature is reversibly controlled over a wide range. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2303_13902 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Blocking transition of interface traps in MoS$_2$-on-SiO$_2$ FETs Jana, Santu Prasad Gupta, Suraina Gupta, Anjan K. Mesoscale and Nanoscale Physics Materials Science Electrical conductivity with gate-sweep in a few layer MoS$_2$-on-SiO$_2$ field-effect-transistor shows an abrupt reduction in hysteresis when cooled. The hysteresis and time dependent conductivity of the MoS$_2$ channel are modeled using the dynamics of interface traps' occupancy. The reduction in hysteresis is found to be steepest at a blocking temperature near 225 K. This is attributed to the interplay between thermal and barrier energies and fitted using a distribution of the latter. Further, the charge stored in the blocked traps is programmed at low temperatures by cooling under suitable gate voltage. Thus the threshold gate-voltage in nearly non-hysteretic devices at 80 K temperature is reversibly controlled over a wide range. |
| title | Blocking transition of interface traps in MoS$_2$-on-SiO$_2$ FETs |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2303.13902 |