Kerr, Faraday, and Magnetoelectric Effects in MnBi$_2$Te$_4$ Thin Films

Fuente: arXiv
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Hauptverfasser: Lei, Chao, MacDonald, Allan H.
Format: Preprint
Veröffentlicht: 2023
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author Lei, Chao
MacDonald, Allan H.
author_facet Lei, Chao
MacDonald, Allan H.
contents The topological magneto-electric effect (TME) is a characteristic property of topological insulators. In this article, we use a simplified coupled-Dirac-cone electronic structure model to theoretically evaluate the THz and far infrared Kerr and Faraday responses of thin films of MnBi$_2$Te$_4$ with up to $N=10$ septuple layers with the goal of clarifying the relationship between these convenient magneto-optical observables and the TME. We find that for even $N$ the linear Kerr and Faraday responses to an electric field vanish in the low-frequency limit, even though the magnetoelectric response is large and approximately quantized.
format Preprint
id arxiv_https___arxiv_org_abs_2303_14635
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Kerr, Faraday, and Magnetoelectric Effects in MnBi$_2$Te$_4$ Thin Films
Lei, Chao
MacDonald, Allan H.
Mesoscale and Nanoscale Physics
Materials Science
The topological magneto-electric effect (TME) is a characteristic property of topological insulators. In this article, we use a simplified coupled-Dirac-cone electronic structure model to theoretically evaluate the THz and far infrared Kerr and Faraday responses of thin films of MnBi$_2$Te$_4$ with up to $N=10$ septuple layers with the goal of clarifying the relationship between these convenient magneto-optical observables and the TME. We find that for even $N$ the linear Kerr and Faraday responses to an electric field vanish in the low-frequency limit, even though the magnetoelectric response is large and approximately quantized.
title Kerr, Faraday, and Magnetoelectric Effects in MnBi$_2$Te$_4$ Thin Films
topic Mesoscale and Nanoscale Physics
Materials Science
url https://arxiv.org/abs/2303.14635