Gallium Arsenide Optical Phased Array Photonic Integrated Circuit

Fuente: arXiv
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Hauptverfasser: Nickerson, Michael, Song, Bowen, Brookhyser, Jim, Erwin, Gregory, Kleinert, Jan, Klamkin, Jonathan
Format: Preprint
Veröffentlicht: 2023
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author Nickerson, Michael
Song, Bowen
Brookhyser, Jim
Erwin, Gregory
Kleinert, Jan
Klamkin, Jonathan
author_facet Nickerson, Michael
Song, Bowen
Brookhyser, Jim
Erwin, Gregory
Kleinert, Jan
Klamkin, Jonathan
contents A 16-channel optical phased array is fabricated on a gallium arsenide photonic integrated circuit platform with a low-complexity process. Tested with a 1064 nm external laser, the array demonstrates 0.92° beamwidth, 15.3° grating-lobe-free steering range, and 12 dB sidelobe level. Based on a reverse biased p-i-n structure, component phase modulators are 3 mm long with DC power consumption of less than 5 $μ$W and greater than 770 MHz electro-optical bandwidth. Individual 4-mm-long phase modulators based on the same structure demonstrate single-sided V$π{\cdot}$L modulation efficiency ranging from 0.5 V${\cdot}$cm to 1.23 V${\cdot}$cm when tested at wavelengths from 980 nm to 1360 nm.
format Preprint
id arxiv_https___arxiv_org_abs_2304_03417
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Gallium Arsenide Optical Phased Array Photonic Integrated Circuit
Nickerson, Michael
Song, Bowen
Brookhyser, Jim
Erwin, Gregory
Kleinert, Jan
Klamkin, Jonathan
Optics
Applied Physics
A 16-channel optical phased array is fabricated on a gallium arsenide photonic integrated circuit platform with a low-complexity process. Tested with a 1064 nm external laser, the array demonstrates 0.92° beamwidth, 15.3° grating-lobe-free steering range, and 12 dB sidelobe level. Based on a reverse biased p-i-n structure, component phase modulators are 3 mm long with DC power consumption of less than 5 $μ$W and greater than 770 MHz electro-optical bandwidth. Individual 4-mm-long phase modulators based on the same structure demonstrate single-sided V$π{\cdot}$L modulation efficiency ranging from 0.5 V${\cdot}$cm to 1.23 V${\cdot}$cm when tested at wavelengths from 980 nm to 1360 nm.
title Gallium Arsenide Optical Phased Array Photonic Integrated Circuit
topic Optics
Applied Physics
url https://arxiv.org/abs/2304.03417