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Comprehensive TCAD Simulation Study of High Voltage (>650V) Common Drain Bidirectional AlGaN/GaN HEMTs

Fuente: arXiv

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Detalles Bibliográficos
Autores principales:	Alam, Md Tahmidul, Gupta, Chirag
Formato:	Preprint
Publicado:	2023
Materias:	Applied Physics
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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