Crack-free high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT on sapphire with record low sheet resistance

Fuente: arXiv

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Bibliographic Details
Main Authors:	Mukhopadhyay, Swarnav, Liu, Cheng, Chen, Jiahao, Sanyal, Surjava, Bai, Ruixin, Wang, Guangying, Gupta, Chirag, Pasayat, Shubhra
Format:	Preprint
Published:	2023
Subjects:	Applied Physics Materials Science
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2304.05593