Efficient activation of telecom emitters in silicon upon ns pulsed laser annealing
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arXiv
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| Autores principales: | , , , , , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2023
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| Materias: | |
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| author | Andrini, G. Zanelli, G. Tchernij, S. Ditalia Corte, E. Hernandez, E. Nieto Verna, A. Cocuzza, M. Bernardi, E. Virzì, S. Traina, P. Degiovanni, I. P. Genovese, M. Olivero, P. Forneris, J. |
| author_facet | Andrini, G. Zanelli, G. Tchernij, S. Ditalia Corte, E. Hernandez, E. Nieto Verna, A. Cocuzza, M. Bernardi, E. Virzì, S. Traina, P. Degiovanni, I. P. Genovese, M. Olivero, P. Forneris, J. |
| contents | The recent demonstration of optically active telecom emitters makes silicon a compelling candidate for solid state quantum photonic platforms. Particularly fabrication of the G center has been demonstrated in carbon-rich silicon upon conventional thermal annealing. However, the high-yield controlled fabrication of these emitters at the wafer-scale still requires the identification of a suitable thermodynamic pathway enabling its activation following ion implantation. Here we demonstrate the efficient activation of G centers in high-purity silicon substrates upon ns pulsed laser annealing. The proposed method enables the non-invasive, localized activation of G centers by the supply of short non-stationary pulses, thus overcoming the limitations of conventional rapid thermal annealing related to the structural metastability of the emitters. A finite-element analysis highlights the strong non-stationarity of the technique, offering radically different defect-engineering capabilities with respect to conventional longer thermal treatments, paving the way to the direct and controlled fabrication of emitters embedded in integrated photonic circuits and waveguides. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2304_10132 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Efficient activation of telecom emitters in silicon upon ns pulsed laser annealing Andrini, G. Zanelli, G. Tchernij, S. Ditalia Corte, E. Hernandez, E. Nieto Verna, A. Cocuzza, M. Bernardi, E. Virzì, S. Traina, P. Degiovanni, I. P. Genovese, M. Olivero, P. Forneris, J. Applied Physics Optics Quantum Physics The recent demonstration of optically active telecom emitters makes silicon a compelling candidate for solid state quantum photonic platforms. Particularly fabrication of the G center has been demonstrated in carbon-rich silicon upon conventional thermal annealing. However, the high-yield controlled fabrication of these emitters at the wafer-scale still requires the identification of a suitable thermodynamic pathway enabling its activation following ion implantation. Here we demonstrate the efficient activation of G centers in high-purity silicon substrates upon ns pulsed laser annealing. The proposed method enables the non-invasive, localized activation of G centers by the supply of short non-stationary pulses, thus overcoming the limitations of conventional rapid thermal annealing related to the structural metastability of the emitters. A finite-element analysis highlights the strong non-stationarity of the technique, offering radically different defect-engineering capabilities with respect to conventional longer thermal treatments, paving the way to the direct and controlled fabrication of emitters embedded in integrated photonic circuits and waveguides. |
| title | Efficient activation of telecom emitters in silicon upon ns pulsed laser annealing |
| topic | Applied Physics Optics Quantum Physics |
| url | https://arxiv.org/abs/2304.10132 |