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Main Authors: Huang, Li, Kong, Xianghua, Zheng, Qi, Xing, Yuqing, Chen, Hui, Li, Yan, Hu, Zhixin, Zhu, Shiyu, Qiao, Jingsi, Zhang, Yu-Yang, Cheng, Haixia, Cheng, Zhihai, Qiu, Xianggang, Liu, Enke, Lei, Hechang, Lin, Xiao, Wang, Ziqiang, Yang, Haitao, Ji, Wei, Gao, Hong-Jun
Format: Preprint
Published: 2023
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Online Access:https://arxiv.org/abs/2305.00826
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author Huang, Li
Kong, Xianghua
Zheng, Qi
Xing, Yuqing
Chen, Hui
Li, Yan
Hu, Zhixin
Zhu, Shiyu
Qiao, Jingsi
Zhang, Yu-Yang
Cheng, Haixia
Cheng, Zhihai
Qiu, Xianggang
Liu, Enke
Lei, Hechang
Lin, Xiao
Wang, Ziqiang
Yang, Haitao
Ji, Wei
Gao, Hong-Jun
author_facet Huang, Li
Kong, Xianghua
Zheng, Qi
Xing, Yuqing
Chen, Hui
Li, Yan
Hu, Zhixin
Zhu, Shiyu
Qiao, Jingsi
Zhang, Yu-Yang
Cheng, Haixia
Cheng, Zhihai
Qiu, Xianggang
Liu, Enke
Lei, Hechang
Lin, Xiao
Wang, Ziqiang
Yang, Haitao
Ji, Wei
Gao, Hong-Jun
contents Kagome-lattice materials possess attractive properties for quantum computing applications, but their synthesis remains challenging. Herein, we show surface kagome electronic states (SKESs) on a Sn-terminated triangular Co3Sn2S2 surface, which are imprinted by vertical p-d electronic hybridization between the surface Sn (subsurface S) atoms and the buried Co kagome lattice network in the Co3Sn layer under the surface. Owing to the subsequent lateral hybridization of the Sn and S atoms in a corner-sharing manner, the kagome symmetry and topological electronic properties of the Co3Sn layer is proximate to the Sn surface. The SKESs and both hybridizations were verified via qPlus non-contact atomic force microscopy (nc-AFM) and density functional theory calculations. The construction of SKESs with tunable properties can be achieved by the atomic substitution of surface Sn (subsurface S) with other group III-V elements (Se or Te), which was demonstrated theoretically. This work exhibits the powerful capacity of nc-AFM in characterizing localized topological states and reveals the strategy for synthesis of large-area transition-metal-based kagome lattice materials using conventional surface deposition techniques.
format Preprint
id arxiv_https___arxiv_org_abs_2305_00826
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Discovery and construction of surface kagome electronic states induced by p-d electronic hybridization
Huang, Li
Kong, Xianghua
Zheng, Qi
Xing, Yuqing
Chen, Hui
Li, Yan
Hu, Zhixin
Zhu, Shiyu
Qiao, Jingsi
Zhang, Yu-Yang
Cheng, Haixia
Cheng, Zhihai
Qiu, Xianggang
Liu, Enke
Lei, Hechang
Lin, Xiao
Wang, Ziqiang
Yang, Haitao
Ji, Wei
Gao, Hong-Jun
Materials Science
Mesoscale and Nanoscale Physics
Kagome-lattice materials possess attractive properties for quantum computing applications, but their synthesis remains challenging. Herein, we show surface kagome electronic states (SKESs) on a Sn-terminated triangular Co3Sn2S2 surface, which are imprinted by vertical p-d electronic hybridization between the surface Sn (subsurface S) atoms and the buried Co kagome lattice network in the Co3Sn layer under the surface. Owing to the subsequent lateral hybridization of the Sn and S atoms in a corner-sharing manner, the kagome symmetry and topological electronic properties of the Co3Sn layer is proximate to the Sn surface. The SKESs and both hybridizations were verified via qPlus non-contact atomic force microscopy (nc-AFM) and density functional theory calculations. The construction of SKESs with tunable properties can be achieved by the atomic substitution of surface Sn (subsurface S) with other group III-V elements (Se or Te), which was demonstrated theoretically. This work exhibits the powerful capacity of nc-AFM in characterizing localized topological states and reveals the strategy for synthesis of large-area transition-metal-based kagome lattice materials using conventional surface deposition techniques.
title Discovery and construction of surface kagome electronic states induced by p-d electronic hybridization
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2305.00826