Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2023
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2305.04362 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866909575831093248 |
|---|---|
| author | Mette, Gerson Ishioka, Kunie Youngkin, Steven Stolz, Wolfgang Volz, Kerstin Höfer, Ulrich |
| author_facet | Mette, Gerson Ishioka, Kunie Youngkin, Steven Stolz, Wolfgang Volz, Kerstin Höfer, Ulrich |
| contents | Ultrafast carrier and phonon dynamics at the buried heterointerface of GaP/Si(001) are investigated by means of two-color pump-probe reflectivity measurements. The carrier-induced reflectivity signal exhibits a resonant enhancement at pump-photon energies of 1.4 eV, which can be assigned to an optical transition between electronic interface states. The transient reflectivity is modulated by a coherent oscillation at 2 THz, whose amplitude also becomes maximum at 1.4 eV. The observed resonant behavior of the phonon mode in combination with a characteristic wavelength-dependence of, both, its frequency and initial phase, strongly indicate that the 2-THz mode is a difference-combination mode of a GaP-like and a Si-like phonon at the heterointerface and that this second-order scattering process can be enhanced by a double resonance involving the interfacial electronic states. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2305_04362 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Strongly coupled interface electronic states and interface phonon mode at GaP/Si(001) Mette, Gerson Ishioka, Kunie Youngkin, Steven Stolz, Wolfgang Volz, Kerstin Höfer, Ulrich Materials Science Ultrafast carrier and phonon dynamics at the buried heterointerface of GaP/Si(001) are investigated by means of two-color pump-probe reflectivity measurements. The carrier-induced reflectivity signal exhibits a resonant enhancement at pump-photon energies of 1.4 eV, which can be assigned to an optical transition between electronic interface states. The transient reflectivity is modulated by a coherent oscillation at 2 THz, whose amplitude also becomes maximum at 1.4 eV. The observed resonant behavior of the phonon mode in combination with a characteristic wavelength-dependence of, both, its frequency and initial phase, strongly indicate that the 2-THz mode is a difference-combination mode of a GaP-like and a Si-like phonon at the heterointerface and that this second-order scattering process can be enhanced by a double resonance involving the interfacial electronic states. |
| title | Strongly coupled interface electronic states and interface phonon mode at GaP/Si(001) |
| topic | Materials Science |
| url | https://arxiv.org/abs/2305.04362 |