Unconventional anomalous Hall effect in epitaxially stabilized orthorhombic Ru$^{3+}$ perovskite thin films

Fuente: arXiv
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Autores principales: Zhang, L. -F., Fujita, T. C., Masutake, Y., Kawamura, M., Arima, T., Kumigashira, H., Tokunaga, M., Kawasaki, M.
Formato: Preprint
Publicado: 2023
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author Zhang, L. -F.
Fujita, T. C.
Masutake, Y.
Kawamura, M.
Arima, T.
Kumigashira, H.
Tokunaga, M.
Kawasaki, M.
author_facet Zhang, L. -F.
Fujita, T. C.
Masutake, Y.
Kawamura, M.
Arima, T.
Kumigashira, H.
Tokunaga, M.
Kawasaki, M.
contents Complex oxides are mesmerizing material systems to realize multiple physical properties and functionalities by integrating different elements in a single compound. However, owing to the chemical instability, not all the combinations of elements can be materialized despite the intriguing potential expected from their magnetic and electronic properties. In this study, we demonstrate an epitaxial stabilization of orthorhombic Ru$^{3+}$ perovskite oxides: LaRuO$_3$ and NdRuO$_3$, and their magnetotransport properties that reflect the difference between non-magnetic La$^{3+}$ and magnetic Nd$^{3+}$. Above all, an unconventional anomalous Hall effect accompanied by an inflection point in magnetoresistance is observed around 1.3 T below 1 K for NdRuO$_3$, which is ascribed to topological Hall effect possibly due to a non-coplanar spin texture on Nd$^{3+}$ sublattice. These studies not only serve a new testbed for the interplay between spin-orbit coupling and Coulomb interaction but also open a new avenue to explore topological emergent phenomena in well-studied perovskite oxides.
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id arxiv_https___arxiv_org_abs_2305_09201
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Unconventional anomalous Hall effect in epitaxially stabilized orthorhombic Ru$^{3+}$ perovskite thin films
Zhang, L. -F.
Fujita, T. C.
Masutake, Y.
Kawamura, M.
Arima, T.
Kumigashira, H.
Tokunaga, M.
Kawasaki, M.
Materials Science
Mesoscale and Nanoscale Physics
Strongly Correlated Electrons
Complex oxides are mesmerizing material systems to realize multiple physical properties and functionalities by integrating different elements in a single compound. However, owing to the chemical instability, not all the combinations of elements can be materialized despite the intriguing potential expected from their magnetic and electronic properties. In this study, we demonstrate an epitaxial stabilization of orthorhombic Ru$^{3+}$ perovskite oxides: LaRuO$_3$ and NdRuO$_3$, and their magnetotransport properties that reflect the difference between non-magnetic La$^{3+}$ and magnetic Nd$^{3+}$. Above all, an unconventional anomalous Hall effect accompanied by an inflection point in magnetoresistance is observed around 1.3 T below 1 K for NdRuO$_3$, which is ascribed to topological Hall effect possibly due to a non-coplanar spin texture on Nd$^{3+}$ sublattice. These studies not only serve a new testbed for the interplay between spin-orbit coupling and Coulomb interaction but also open a new avenue to explore topological emergent phenomena in well-studied perovskite oxides.
title Unconventional anomalous Hall effect in epitaxially stabilized orthorhombic Ru$^{3+}$ perovskite thin films
topic Materials Science
Mesoscale and Nanoscale Physics
Strongly Correlated Electrons
url https://arxiv.org/abs/2305.09201