Spin scattering and Hall effects in monolayer Fe3GeTe2
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arXiv
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| Auteurs principaux: | , , , , , |
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| Format: | Preprint |
| Publié: |
2023
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| _version_ | 1866915695323774976 |
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| author | Yu, Luyan Yu, Jie-Xiang Zang, Jiadong Lake, Roger K. Zhuang, Houlong Yin, Gen |
| author_facet | Yu, Luyan Yu, Jie-Xiang Zang, Jiadong Lake, Roger K. Zhuang, Houlong Yin, Gen |
| contents | We theoretically show that the carrier transport in monolayer Fe3GeTe2 experiences a transition between anomalous Hall effect and spin Hall effect when the spin polarization of disorders switches between out-of-plane and in-plane. These Hall effects are allowed when the magnetization is polarized in-plane, breaking the C3 rotation symmetry. The transition originates from the selection rule of spin scattering, the strong spin-orbit coupling, and the van Hove singularities near the Fermi surface. The scattering selection rule tolerates the sign change of the disorder spin, which provides a convenient method to detect the switching of antiferromagnetic insulators regardless of the interfacial roughness in a heterostructure. This provides a convenient platform for the study of 2D spintronics through various van-der-Waals heterostructures. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2305_09743 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Spin scattering and Hall effects in monolayer Fe3GeTe2 Yu, Luyan Yu, Jie-Xiang Zang, Jiadong Lake, Roger K. Zhuang, Houlong Yin, Gen Materials Science We theoretically show that the carrier transport in monolayer Fe3GeTe2 experiences a transition between anomalous Hall effect and spin Hall effect when the spin polarization of disorders switches between out-of-plane and in-plane. These Hall effects are allowed when the magnetization is polarized in-plane, breaking the C3 rotation symmetry. The transition originates from the selection rule of spin scattering, the strong spin-orbit coupling, and the van Hove singularities near the Fermi surface. The scattering selection rule tolerates the sign change of the disorder spin, which provides a convenient method to detect the switching of antiferromagnetic insulators regardless of the interfacial roughness in a heterostructure. This provides a convenient platform for the study of 2D spintronics through various van-der-Waals heterostructures. |
| title | Spin scattering and Hall effects in monolayer Fe3GeTe2 |
| topic | Materials Science |
| url | https://arxiv.org/abs/2305.09743 |