Skyrmion-mediated Nonvolatile Ternary Memory
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arXiv
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| Main Authors: | , , , , |
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| Format: | Preprint |
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2023
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| _version_ | 1866914006410723328 |
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| author | Rajib, Md Mahadi Bindal, Namita Raj, Ravish Kumar Kaushik, Brajesh Kumar Atulasimha, Jayasimha |
| author_facet | Rajib, Md Mahadi Bindal, Namita Raj, Ravish Kumar Kaushik, Brajesh Kumar Atulasimha, Jayasimha |
| contents | Multistate memory systems have the ability to store and process more data in the same physical space as binary memory systems, making them a potential alternative to existing binary memory systems. In the past, it has been demonstrated that voltage-controlled magnetic anisotropy (VCMA) based writing is highly energy-efficient compared to other writing methods used in non-volatile nano-magnetic binary memory systems. In this study, we introduce a new, VCMA-based and skyrmion-mediated non-volatile ternary memory system using a perpendicular magnetic tunnel junction (p-MTJ) in the presence of room temperature thermal perturbation. We have also shown that ternary states {-1, 0, +1} can be implemented with three magnetoresistance values obtained from a p-MTJ corresponding to ferromagnetic up, down, and skyrmion state, with 99% switching probability in the presence of room temperature thermal noise in an energy-efficient way, requiring ~3 fJ energy on an average for each switching operation. Additionally, we show that our proposed ternary memory demonstrates an improvement in area and energy by at least 2X and ~60X respectively, compared to state-of-the-art spin-transfer torque (STT)-based non-volatile magnetic multistate memories. Furthermore, these three states can be potentially utilized for energy-efficient, high-density in-memory quantized deep neural network implementation. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2305_09950 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Skyrmion-mediated Nonvolatile Ternary Memory Rajib, Md Mahadi Bindal, Namita Raj, Ravish Kumar Kaushik, Brajesh Kumar Atulasimha, Jayasimha Mesoscale and Nanoscale Physics Multistate memory systems have the ability to store and process more data in the same physical space as binary memory systems, making them a potential alternative to existing binary memory systems. In the past, it has been demonstrated that voltage-controlled magnetic anisotropy (VCMA) based writing is highly energy-efficient compared to other writing methods used in non-volatile nano-magnetic binary memory systems. In this study, we introduce a new, VCMA-based and skyrmion-mediated non-volatile ternary memory system using a perpendicular magnetic tunnel junction (p-MTJ) in the presence of room temperature thermal perturbation. We have also shown that ternary states {-1, 0, +1} can be implemented with three magnetoresistance values obtained from a p-MTJ corresponding to ferromagnetic up, down, and skyrmion state, with 99% switching probability in the presence of room temperature thermal noise in an energy-efficient way, requiring ~3 fJ energy on an average for each switching operation. Additionally, we show that our proposed ternary memory demonstrates an improvement in area and energy by at least 2X and ~60X respectively, compared to state-of-the-art spin-transfer torque (STT)-based non-volatile magnetic multistate memories. Furthermore, these three states can be potentially utilized for energy-efficient, high-density in-memory quantized deep neural network implementation. |
| title | Skyrmion-mediated Nonvolatile Ternary Memory |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2305.09950 |