High-quality superconducting α-Ta film sputtered on heated silicon substrate
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arXiv
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| Main Authors: | , , , |
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| Format: | Preprint |
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2023
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| _version_ | 1866917658737246208 |
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| author | Wu, Yanfu Ding, Zengqian Xiong, Kanglin Feng, Jiagui |
| author_facet | Wu, Yanfu Ding, Zengqian Xiong, Kanglin Feng, Jiagui |
| contents | Intrigued by the discovery of the long lifetime in the α-Ta/Al2O3-based Transmon qubit, researchers recently found α-Ta film is a promising platform for fabricating multi-qubits with long coherence time. To meet the requirements for integrating superconducting quantum circuits, the ideal method is to grow α-Ta film on a silicon substrate compatible with industrial manufacturing. Here we report the α-Ta film sputter-grown on Si (100) with a low-loss superconducting TiNx buffer layer. The α-Ta film with a large growth temperature window has a good crystalline character. The superconducting critical transition temperature (Tc) and residual resistivity ratio (RRR) in the α-Ta film grown at 500 °C are higher than that in the α-Ta film grown at room temperature (RT). These results provide crucial experimental clues toward understanding the connection between the superconductivity and the materials' properties in the α-Ta film and open a new route for producing a high-quality α-Ta film on silicon substrate for future industrial superconducting quantum computers. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2305_10957 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | High-quality superconducting α-Ta film sputtered on heated silicon substrate Wu, Yanfu Ding, Zengqian Xiong, Kanglin Feng, Jiagui Superconductivity Quantum Physics Intrigued by the discovery of the long lifetime in the α-Ta/Al2O3-based Transmon qubit, researchers recently found α-Ta film is a promising platform for fabricating multi-qubits with long coherence time. To meet the requirements for integrating superconducting quantum circuits, the ideal method is to grow α-Ta film on a silicon substrate compatible with industrial manufacturing. Here we report the α-Ta film sputter-grown on Si (100) with a low-loss superconducting TiNx buffer layer. The α-Ta film with a large growth temperature window has a good crystalline character. The superconducting critical transition temperature (Tc) and residual resistivity ratio (RRR) in the α-Ta film grown at 500 °C are higher than that in the α-Ta film grown at room temperature (RT). These results provide crucial experimental clues toward understanding the connection between the superconductivity and the materials' properties in the α-Ta film and open a new route for producing a high-quality α-Ta film on silicon substrate for future industrial superconducting quantum computers. |
| title | High-quality superconducting α-Ta film sputtered on heated silicon substrate |
| topic | Superconductivity Quantum Physics |
| url | https://arxiv.org/abs/2305.10957 |