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| Autori principali: | , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2023
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| Soggetti: | |
| Accesso online: | https://arxiv.org/abs/2305.14983 |
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| _version_ | 1866917654900506624 |
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| author | Lowe, Benjamin Field, Bernard Hellerstedt, Jack Ceddia, Julian Nourse, Henry L. Powell, Ben J. Medhekar, Nikhil V. Schiffrin, Agustin |
| author_facet | Lowe, Benjamin Field, Bernard Hellerstedt, Jack Ceddia, Julian Nourse, Henry L. Powell, Ben J. Medhekar, Nikhil V. Schiffrin, Agustin |
| contents | Electron-electron interactions in materials lead to exotic many-body quantum phenomena including Mott metal-insulator transitions (MITs), magnetism, quantum spin liquids, and superconductivity. These phases depend on electronic band occupation and can be controlled via the chemical potential. Flat bands in two-dimensional (2D) and layered materials with a kagome lattice enhance electronic correlations. Although theoretically predicted, correlated-electron Mott insulating phases in monolayer 2D metal-organic frameworks (MOFs) with a kagome structure have not yet been realised experimentally. Here, we synthesise a 2D kagome MOF on a 2D insulator. Scanning tunnelling microscopy (STM) and spectroscopy reveal a MOF electronic energy gap of ~200 meV, consistent with dynamical mean field theory predictions of a Mott insulator. Combining template-induced (via work function variations of the substrate) and STM probe-induced gating, we locally tune the electron population of the MOF kagome bands and induce Mott MITs. These findings enable technologies based on electrostatic control of many-body quantum phases in 2D MOFs. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2305_14983 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Local gate control of Mott metal-insulator transition in a 2D metal-organic framework Lowe, Benjamin Field, Bernard Hellerstedt, Jack Ceddia, Julian Nourse, Henry L. Powell, Ben J. Medhekar, Nikhil V. Schiffrin, Agustin Strongly Correlated Electrons Electron-electron interactions in materials lead to exotic many-body quantum phenomena including Mott metal-insulator transitions (MITs), magnetism, quantum spin liquids, and superconductivity. These phases depend on electronic band occupation and can be controlled via the chemical potential. Flat bands in two-dimensional (2D) and layered materials with a kagome lattice enhance electronic correlations. Although theoretically predicted, correlated-electron Mott insulating phases in monolayer 2D metal-organic frameworks (MOFs) with a kagome structure have not yet been realised experimentally. Here, we synthesise a 2D kagome MOF on a 2D insulator. Scanning tunnelling microscopy (STM) and spectroscopy reveal a MOF electronic energy gap of ~200 meV, consistent with dynamical mean field theory predictions of a Mott insulator. Combining template-induced (via work function variations of the substrate) and STM probe-induced gating, we locally tune the electron population of the MOF kagome bands and induce Mott MITs. These findings enable technologies based on electrostatic control of many-body quantum phases in 2D MOFs. |
| title | Local gate control of Mott metal-insulator transition in a 2D metal-organic framework |
| topic | Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2305.14983 |